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Infineon CoolMOS P7 N-Channel MOSFET & Diode, 16 A, 650 V Enhancement Mode, Surface Mount SOT-223 Package IPN60R600P7SATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | IPN60R600P7SATMA1 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | +150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 7W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- The device supports a maximum continuous drain current of 16 A.
- It has a maximum drain source voltage rating of 650 V for high-voltage applications.
- 600 milliohm maximum drain source resistance minimizes conduction losses.
- The typical gate charge is 9 nanocoulombs, requiring low drive energy.
- Maximum power dissipation is rated at 7 W, supporting significant thermal loads.
- The integrated diode features a low forward voltage of 0.9 V for efficient freewheeling operation.
- Operating temperature range spans from −40°C to +150°C ensuring reliability in harsh environments.
- The device is designed for surface mount application in a 3-pin SOT-223 package.
Product Description
Infineon IPN60R600P7SATMA1 CoolMOS P7 Series N-Channel MOSFET & Diode features a 650 V drain-source voltage rating and 16 A maximum continuous drain current, designed for reliable high-voltage power conversion.
This device integrates a high-voltage N-channel MOSFET transistor with an internal diode, enabling efficient switching and synchronous rectification applications. It is supplied in a compact surface mount SOT-223 package with 3 pins, suitable for space-constrained industrial PCB layouts.
The low maximum drain-source resistance of 600 mΩ reduces conduction losses, while a typical gate charge of 9 nC decreases drive power requirements. Its maximum power dissipation rating of 7 W allows for sustained operation under considerable thermal stress.
Rated to operate from −40°C to +150°C ambient, this MOSFET is well-suited for demanding industrial environments, including motor drives, DC-DC converters, and power supplies. The 0.9 V forward voltage of the integrated diode contributes to efficient freewheeling performance.
The device’s enhancement-mode N-channel transistor supports switching transistor applications requiring high voltages and currents. The 20 V maximum gate-source voltage ensures safe operation during control signal application.
The IPN60R600P7SATMA1 is ideal for offline power supplies requiring high voltage switching. It finds use in switch-mode power converters needing surface mount technology components. The device supports synchronous rectification in mixed-topology power stages.
It is applicable in industrial motor drive intermediate stages with elevated temperature ranges. Designed for DC-DC converters operating under high thermal conditions. It is a critical part for robust industrial, commercial, and laboratory electrical applications.
Explore more Infineon semiconductor MOSFET & diode products and other discrete semiconductors in the Electronics & Electricals category here on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 A.
It has a maximum drain-source voltage rating of 650 V, suitable for high-voltage applications.
The maximum power dissipation is rated at 7 W, allowing for operation under significant thermal loads.
The typical gate charge is 9 nanocoulombs (nC), which requires low drive energy.
The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
It operates within a temperature range of -40°C to +150°C, ensuring reliability in harsh environments.
The maximum gate-source voltage for this device is 20 V, ensuring safe operation during control signal application.
The integrated diode features a low forward voltage of 0.9 V, which contributes to efficient freewheeling performance.
This model has a pin count of 3, suitable for surface mount applications.
It features an N-channel type, designed for enhancement mode operation.
This MOSFET is applicable in industrial motor drives, DC-DC converters, and power supplies, particularly in high-voltage power conversion.
The country of origin for this device is India.
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