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Infineon HEXFET N-Channel MOSFET & Diode 5.4 A 100 V Enhancement 8-Pin SO-8 IRF7490TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.75mm |
| Length | 5mm |
| Model | IRF7490TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.4A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 39mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This device uses enhancement mode channel technology ensuring efficient switching.
- It comes in an 8-Pin SO-8 package optimized for compact surface mounting.
- Maximum drain-source resistance is low at 39 milliohms for excellent conduction.
- It supports a maximum power dissipation of 2.5 W suitable for medium power applications.
- The typical gate charge is 37 nC at Vgs, enabling fast switching performance.
- Operating temperature range spans from -55°C to 150°C ensuring reliability across environments.
- Forward voltage drop of 1.3 V ensures low conduction losses in diode operation.
- Pin count of 8 and dimensions of 5 mm length, 4 mm width, and 1.75 mm height support space-efficient PCB layout.
Product Description
Infineon IRF7490TRPBF HEXFET N-Channel MOSFET & Diode combines high efficiency and reliability in a compact SO-8 surface mount package. Rated for a continuous drain current of 5.4 A and maximum drain-source voltage of 100 V, this device is designed to meet the demanding requirements of power management circuits.
The enhancement mode N-channel MOSFET features a low 39 milliohm drain-source resistance which enables low conduction losses and improved thermal management. With a maximum power dissipation of 2.5 W and operation temperature range from -55°C to 150°C, it performs reliably in harsh industrial and commercial environments.
Its optimized gate charge of 37 nC allows rapid switching suitable for high frequency applications such as switching power supplies, motor drives, and computing power regulation. The integrated diode with a forward voltage of 1.3 V further enhances efficiency by reducing losses during switching.
The compact 8-pin SO-8 package with dimensions of 5 mm length, 4 mm width, and 1.75 mm height is ideal for space-constrained PCB designs while maintaining thermal and electrical performance.
This MOSFET & diode combination is suitable for industrial, automotive, power conversion, and computing electronic applications. Optimized for high switching frequency and power density. Robust performance under extreme temperatures enhances reliability.
Efficient conduction and switching characteristics improve energy savings. Available through major distribution channels ensuring supply consistency.
This product belongs to the category of MOSFET & Diode within discrete semiconductors, making it ideal for advanced electrical engineering and development projects. Discover more Infineon semiconductor components on EnvMart for your electronic design needs.
Explore more products in our MOSFET & Diode category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.4 A.
It supports a maximum drain-source voltage of 100 V.
The typical gate charge is 37 nC at Vgs.
The device comes in an 8-Pin SO-8 package with dimensions of 5 mm length, 4 mm width, and 1.75 mm height.
The maximum power dissipation is 2.5 W, suitable for medium power applications.
The operating temperature range spans from -55°C to 150°C.
The forward voltage drop is 1.3 V, ensuring low conduction losses in diode operation.
This model features a low drain-source resistance of 39 milliohms, which enables low conduction losses and improved thermal management.
It is designed for surface mounting.
It is suitable for industrial, automotive, power conversion, and computing electronic applications.
It features an N-channel configuration.
The maximum gate-source voltage is 20 V.
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