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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.1mm |
| Model | IPL60R360P6SATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | CoolMOS P6 |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK |
| Minimum Operating Temperature | -40°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 360mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 89.3W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPL60R360P6SATMA1 CoolMOS P6 N-Channel MOSFET & Diode is a high performance discrete semiconductor device designed for power switching and conversion applications. It features a compact 5-pin ThinPAK package measuring 5.1mm in length, 6.1mm in width, and only 1.1mm in height. The package's low parasitic inductance and surface mount design facilitate fast switching speeds and low electromagnetic interference (EMI), making it suitable for power density-sensitive industrial designs.
This MOSFET device supports a maximum continuous drain current of 30 Amperes and a maximum drain-source voltage of 650 Volts, making it applicable for high voltage power electronics. The CoolMOS P6 technology provides extremely low losses due to a low figure-of-merit (FOM) combining Rds(on) and gate charge, enhancing efficiency in power conversion applications.
The device offers an enhancement mode N-channel channel type with a maximum drain-source resistance (Rds(on)) of 360 milliohms, ensuring low conduction losses during operation. It is equipped with a maximum gate-source voltage rating of 20 Volts and a typical forward voltage of 900 millivolts, balancing performance and reliability.
Operating temperature range extends from -40°C to 150°C, suitable for industrial grade applications. The package uses lead-free plating and halogen-free mold compounds to comply with environmental standards. Its rugged design enables high commutation robustness and ease of drive, supporting diverse industrial, laboratory, manufacturing, and power electronics applications.
The ThinPAK package footprint of 5x6 mm together with the device’s performance features make this MOSFET ideal for compact, high power density system designs in industrial power supplies, renewable energy inverters, and other demanding electronic systems.
The ThinPAK 5x6 mm package reduces system size while maintaining thermal performance similar to DPAK. Very low source inductance of 1.6nH contributes to efficient switching and EMI reduction. Leadless SMD package eases PCB assembly and handling.
Qualified for industrial grade use according to JEDEC standards. Environmentally compliant with Pb-free and halogen-free materials. Explore EnvMart's wide range of semiconductor discrete components and power MOSFET solutions for your next industrial or electronic design project.
Explore more products in our MOSFET & Diode category.
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