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Infineon CoolMOS P6 N-Channel MOSFET & Diode 30A 650V Enhancement Mode 5-Pin ThinPAK IPL60R360P6SATMA1

Category MOSFET & Diode Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 5.1mm
Model IPL60R360P6SATMA1
Width 6.1mm
Mount Type Surface
Series CoolMOS P6
Maximum Operating Temperature 150°C
Package Type ThinPAK
Minimum Operating Temperature -40°C
Pin Count 5
Channel Type N
Maximum Continuous Drain Current Id 30A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 360mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 89.3W
Typical Gate Charge Qg @ Vgs 22nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • The ThinPAK package has a low profile of 1.1mm height and a footprint of 5.1mm by 6.1mm for space saving designs.
  • It features an enhancement mode N-channel MOSFET with CoolMOS P6 technology for high efficiency and low losses.
  • Maximum power dissipation is rated at 89.3W enabling robust performance in demanding applications.
  • Maximum gate-source voltage rating of 20V ensures reliable switching operation.
  • The device provides high commutation ruggedness and easy drive characteristics for industrial and power applications.
  • Designed for surface mount with 5 pins, it offers very low Rds(on) of 360mΩ at maximum ratings.
  • Operates within temperature range from -40°C to 150°C, suitable for industrial environments.
  • Typical forward voltage of 900mV minimizes conduction losses.

Product Description

Infineon IPL60R360P6SATMA1 CoolMOS P6 N-Channel MOSFET & Diode is a high performance discrete semiconductor device designed for power switching and conversion applications. It features a compact 5-pin ThinPAK package measuring 5.1mm in length, 6.1mm in width, and only 1.1mm in height. The package's low parasitic inductance and surface mount design facilitate fast switching speeds and low electromagnetic interference (EMI), making it suitable for power density-sensitive industrial designs.

This MOSFET device supports a maximum continuous drain current of 30 Amperes and a maximum drain-source voltage of 650 Volts, making it applicable for high voltage power electronics. The CoolMOS P6 technology provides extremely low losses due to a low figure-of-merit (FOM) combining Rds(on) and gate charge, enhancing efficiency in power conversion applications.

The device offers an enhancement mode N-channel channel type with a maximum drain-source resistance (Rds(on)) of 360 milliohms, ensuring low conduction losses during operation. It is equipped with a maximum gate-source voltage rating of 20 Volts and a typical forward voltage of 900 millivolts, balancing performance and reliability.

Operating temperature range extends from -40°C to 150°C, suitable for industrial grade applications. The package uses lead-free plating and halogen-free mold compounds to comply with environmental standards. Its rugged design enables high commutation robustness and ease of drive, supporting diverse industrial, laboratory, manufacturing, and power electronics applications.

The ThinPAK package footprint of 5x6 mm together with the device’s performance features make this MOSFET ideal for compact, high power density system designs in industrial power supplies, renewable energy inverters, and other demanding electronic systems.

The ThinPAK 5x6 mm package reduces system size while maintaining thermal performance similar to DPAK. Very low source inductance of 1.6nH contributes to efficient switching and EMI reduction. Leadless SMD package eases PCB assembly and handling.

Qualified for industrial grade use according to JEDEC standards. Environmentally compliant with Pb-free and halogen-free materials. Explore EnvMart's wide range of semiconductor discrete components and power MOSFET solutions for your next industrial or electronic design project.

Explore more products in our MOSFET & Diode category.

Infineon CoolMOS P6 N-Channel MOSFET & Diode 30A 650V Enhancement Mode 5-Pin ThinPAK IPL60R360P6SATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 30 Amperes.

It has a maximum drain-source voltage rating of 650 Volts.

The ThinPAK package measures 5.1mm in length, 6.1mm in width, and 1.1mm in height.

The maximum drain-source resistance (Rds(on)) is 360 milliohms.

It operates within a temperature range from -40°C to 150°C.

The typical forward voltage is 900 millivolts.

The maximum gate-source voltage rating is 20 Volts.

This model supports surface mounting with a 5-pin configuration.

It utilizes CoolMOS P6 technology for high efficiency and low losses.

It is suitable for power switching and conversion applications in industrial environments.

The maximum power dissipation is rated at 89.3 Watts.

The country of origin for this product is India.

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