$23.16
$20.22
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A Continuous Drain Current, 30 V Drain Source Voltage IPD90P03P4L04ATMA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD90P03P4L04ATMA2 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 4.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 137W |
| Typical Gate Charge Qg @ Vgs | 125nC |
| Maximum Gate Source Voltage Vgs | 5V |
| Forward Voltage Vf | -1.3V |
Key Features
- Equipped with a 3-pin TO-252 surface-mount package for efficient PCB mounting.
- Features 4.1 milliohm maximum drain-source resistance to reduce conduction losses.
- Supports a maximum power dissipation of 137 watts enabling sustained thermal performance.
- Operational temperature range spans from -55°C to 175°C for robust reliability.
- Typical gate charge of 125 nanocoulombs ensures predictable switching behavior.
- Maximum gate-source voltage is 5 volts securing safe gate drive margins.
- Integrates a body diode with a forward voltage of -1.3 volts suitable for power conversion circuits.
- Certified to automotive standard AEC-Q101 for enhanced automotive system compatibility.
Product Description
Infineon IPD90P03P4L04ATMA2 is a Type P-Channel OptiMOS MOSFET and diode device intended for high-current switching applications operating up to 90 amperes continuous drain current and 30 volts maximum drain-source voltage. Featuring a low on-resistance of 4.1 mΩ, this enhancement-mode transistor delivers high efficiency and reduced conduction losses in automotive and power conversion environments.
The device is packaged in a robust TO-252 surface-mount package with three pins, ensuring compact integration on printed circuit boards. It offers a maximum power dissipation capacity of 137 watts, allowing it to sustain high thermal loads effectively. The operating temperature range between -55°C and 175°C makes it suitable for demanding environmental extremes frequently encountered in automotive and industrial applications.
The typical gate charge is 125 nC at Vgs, providing predictable and efficient switching response. The maximum gate-source voltage rating is 5 V, which establishes the safe operating limit for gate drive signals to prevent damage.
Integral to this MOSFET is a body diode exhibiting a forward voltage of -1.3 V, beneficial for synchronous rectification and power distribution applications. The product meets the AEC-Q101 automotive qualification standard, ensuring reliability and quality required for automotive electronic systems design.
This semiconductor is ideal for use in automotive DC-DC converter power stages, synchronous rectifiers, low-voltage motor drives, battery management systems, and power distribution modules in commercial and industrial settings.
3-pin TO-252 surface mount package for optimal integration. Low on-resistance of 4.1 milliohms reduces conduction losses. 90 amperes continuous drain current supports high-current loads. Power dissipation of 137 watts enables thermal endurance.
Wide temperature operation from -55 to 175 degrees Celsius. 125 nanocoulombs typical gate charge for efficient switching. Maximum 5 volts gate-source voltage limits gate drive amplitude. Body diode features -1.3 volts forward voltage for rectification.
Automotive compliant to AEC-Q101 standard. Explore more Infineon MOSFET & Diode products and electronic components for power management solutions at EnvMart.
Explore more products in our MOSFET & Diode category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 90 amperes.
This device supports a maximum drain-source voltage of 30 volts.
It has a maximum power dissipation capacity of 137 watts.
The maximum drain-source resistance is 4.1 milliohms, which helps reduce conduction losses.
The operational temperature range spans from -55°C to 175°C.
It is packaged in a TO-252 surface-mount package with three pins.
The typical gate charge is 125 nanocoulombs, ensuring predictable switching behavior.
The maximum gate-source voltage is rated at 5 volts.
Yes, it is certified to the AEC-Q101 automotive standard for enhanced compatibility in automotive systems.
The dimensions are 6.73mm in length, 6.22mm in width, and 2.41mm in height.
Related Products
$23.16
$20.22
-12.7%
New
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.95
$0.92
-3%
New
$430.24
$417.33
-3%
New
$263.75
$255.84
-3%
New
$23.16
$20.22
-12.7%
New
$23.16
$20.22
Save 12.7%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent