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ROHM NPN Power Transistor 7A 50V TO-252 Surface Mount 3-Pin 2SCR583D3TL1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 2.4mm |
| Length | 6.8mm |
| Model | 2SCR583D3TL1 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | 2SCR583D |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 180 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 10W |
| Maximum DC Collector Current Idc | 7A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 280MHz |
Key Features
- High collector current capability of 7 amperes.
- Collector-emitter voltage rated at 50 volts for reliable operation.
- TO-252 (DPAK) package suitable for surface mounting.
- Maximum power dissipation of 10 watts for efficient heat handling.
- Minimum DC current gain of 180 for effective amplification.
- Wide operating temperature range from -55°C to 150°C ensures durability.
- 3-pin design compatible with a variety of circuit layouts.
- Suitable as power driver transistor in electronic circuits.
Product Description
ROHM 2SCR583D3TL1 is a high-performance NPN power transistor designed for low frequency amplification and power driver applications. Manufactured with a TO-252 (DPAK) surface mount package, it supports a maximum DC collector current of 7 amperes and withstands collector-emitter voltages up to 50 volts. The transistor features a maximum power dissipation capacity of 10 watts, enabling reliable operation under load.
Equipped with a minimum DC current gain (hFE) of 180 and a transition frequency of up to 280 MHz, this transistor provides efficient amplification for various industrial and electronic circuit applications. The device supports a broad temperature range from -55°C to 150°C, ensuring stable performance even in harsh environments.
The 3-pin TO-252 package simplifies mounting and circuit integration, making it ideal for surface mounting on printed circuit boards. Its complementary PNP counterpart is the 2SAR583D3, facilitating push-pull amplifier designs and balanced circuits.
This transistor is widely used in electronic components, power amplifiers, automation systems, industrial controls, and signal processing circuits within laboratories, manufacturing, and consumer electronics industries.
High collector current capability of 7A. Collector-emitter voltage up to 50V. TO-252 surface mount package for compact PCB designs. Maximum power dissipation of 10W for robust performance. Transition frequency up to 280 MHz.
DC current gain of minimum 180. Wide operating temperature range from -55°C to 150°C. 3-pin configuration. Complementary PNP transistor available (2SAR583D3). Suitable for power driver and low frequency amplifier applications.
Explore more power and discrete semiconductor components in the ROHM series and related product categories at EnvMart for your industrial, laboratory, and manufacturing needs.
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Frequently Asked Questions
The maximum DC collector current for this model is 7 amperes.
This transistor has a collector-emitter voltage rating of 50 volts.
It is housed in a TO-252 (DPAK) surface mount package.
The maximum power dissipation capacity is 10 watts.
The minimum DC current gain (hFE) for this model is 180.
It operates within a wide temperature range from -55°C to 150°C.
This model features a 3-pin configuration.
The transition frequency is up to 280 MHz.
This is an NPN bipolar power transistor.
The maximum emitter-base voltage (VEBO) is 6 volts.
It is suitable for power driver and low frequency amplifier applications in various electronic circuits.
The country of origin for this transistor is India.
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