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Infineon StrongIRFET N-Channel MOSFET & Diode 40 A 40 V Enhancement 3-Pin ISOMETRIC IRF6613TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 680μm |
| Length | 6.35mm |
| Model | IRF6613TRPBF |
| Width | 5.05mm |
| Mount Type | Surface |
| Series | StrongIRFET |
| Package Type | ISOMETRIC |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 3.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 89W |
| Typical Gate Charge Qg @ Vgs | 42nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- This MOSFET features an enhancement mode channel type for efficient power switching.
- Maximum drain-source resistance of 3.5 milliohms ensures low conduction losses.
- Typical gate charge at 42 nC enables fast switching performance.
- Rated for a maximum power dissipation of 89 W, suitable for demanding applications.
- Compact 3-pin ISOMETRIC package with low parasitic inductance reduces switching noise.
- Maximum gate-source voltage is 20 V, compatible with standard driver circuits.
- Designed for reliable operation with forward voltage of 1 V and dual-side cooling capability.
Product Description
Infineon IRF6613TRPBF is a StrongIRFET N-Channel MOSFET & Diode combining a low RDS(on) and high current handling capability. It is designed for surface mount applications requiring high efficiency and reliable ruggedness with a continuous drain current of 40 A and a drain-source voltage rating of 40 V.
The enhancement mode MOSFET employs low on-resistance of 3.5 mΩ ensuring minimal power loss during conduction. Its typical gate charge of 42 nC facilitates rapid switching, making it suitable for low frequency and high current applications.
The device is housed in a 3-pin ISOMETRIC package with dual-side cooling capability and a low height of 0.68 mm which supports thermal management in compact circuits. The maximum power dissipation rating of 89 W allows it to operate efficiently in power conversion and motor control systems.
Its specifications include a maximum gate-source voltage of 20 V and a forward voltage drop of 1 V. The compact dimensions (6.35 mm x 5.05 mm x 0.68 mm) enable integration in space-constrained electronic assemblies.
This MOSFET is ideal for industrial and commercial applications including DC motors, battery management, inverters, and DC-DC converters in electronics, automotive, and manufacturing sectors. It adheres to industry-standard qualification levels ensuring performance and durability.
This MOSFET features an enhancement mode channel type for efficient power switching. Maximum drain-source resistance of 3.5 milliohms ensures low conduction losses. Typical gate charge at 42 nC enables fast switching performance.
Rated for a maximum power dissipation of 89 W, suitable for demanding applications. Compact 3-pin ISOMETRIC package with low parasitic inductance reduces switching noise. Maximum gate-source voltage is 20 V, compatible with standard driver circuits.
Dimensions are 6.35 mm in length, 5.05 mm width, and a package height of 680 micrometers. Designed for reliable operation with forward voltage of 1 V and dual-side cooling capability. Discover more power MOSFETs and semiconductors in the Electronics & Electricals category at EnvMart for high-performance industrial and commercial electronics design.
Explore more products in our MOSFET & Diode category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The typical gate charge at Vgs for this MOSFET is 42 nC.
It is rated for a maximum power dissipation of 89 W.
The dimensions of this model are 6.35 mm in length, 5.05 mm in width, and a height of 680 μm.
This model is housed in a compact 3-pin ISOMETRIC package.
The maximum gate-source voltage for this MOSFET is 20 V.
The forward voltage drop for this MOSFET is 1 V.
The maximum drain-source resistance is 3.5 mΩ.
This MOSFET is designed for surface mount applications.
The channel type of this model is N-channel enhancement mode.
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