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Infineon CoolMOS P7 N-Channel MOSFET & Diode, 7 A, 800 V Enhancement Mode, 3-Pin TO-251 IPU80R750P7AKMA1

Category MOSFET & Diode Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 6.22mm
Length 6.73mm
Model IPU80R750P7AKMA1
Width 2.41mm
Mount Type Through Hole
Series CoolMOS P7
Maximum Operating Temperature 150°C
Package Type TO-251
Minimum Operating Temperature -40°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 7A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 750mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 51W
Typical Gate Charge Qg @ Vgs 17nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Designed for efficient flyback applications including adapters and chargers.
  • Boasts up to 0.6% efficiency improvement and lower operating temperature by 2°C to 8°C compared to predecessors.
  • Features best-in-class FOM RDS(on) × Eoss and low gate charge for reduced switching losses.
  • Integrated Zener diode providing Class 2 ESD protection enhances reliability.
  • Enables higher power density designs with reduced BOM costs and assembly effort.
  • Operates within a temperature range from -40°C to 150°C for versatile industrial use.
  • Mount type is Through Hole with compact TO-251 package dimensions.

Product Description

The Infineon IPU80R750P7AKMA1 is a CoolMOS P7 series N-Channel MOSFET with an integrated diode, designed for power electronics applications requiring efficient switching performance. It delivers a maximum continuous drain current of 7 A and withstands a maximum drain-source voltage of 800 V, operating in enhancement mode. The device comes in a compact 3-pin TO-251 through-hole package with dimensions of 6.73 mm length, 2.41 mm width, and 6.22 mm height, suitable for industrial, audio SMPS, LED driver, and auxiliary power supply designs.

This MOSFET provides significant improvements over its predecessor and many competitive parts, delivering efficiency gains up to 0.6% and MOSFET temperature reductions between 2°C and 8°C. Its best-in-class figure of merit for RDS(on) and Eoss along with reduced gate charge (Qg of 17 nC) optimize switching performance for higher power density applications. The integrated Zener diode ensures robust ESD protection up to Class 2 (HBM), reducing production faults and improving yield.

Ideal for industrial power management and charger designs, this device supports operation from a minimum ambient temperature of -40°C to a maximum of 150°C, making it broadly applicable in demanding environments. The typical forward voltage (Vf) is 900 mV. This MOSFET reduces BOM cost and assembly effort while improving thermal management and device reliability.

Additional key features include an RDS(on) resistance of 750 mΩ, maximum gate-source voltage rating of ±20 V, and adherence to quality standards without automotive certification. The product is engineered to support customers in fine tuning designs by providing a fully optimized portfolio, contributing to better production yields and fewer returns.

Offers best-in-class switching and conduction performance with low thermal losses. Enhances reliability with integrated Zener diode ESD protection. Supports flyback topology power supplies, chargers, and industrial power circuits.

Enables cost-efficient and high power density applications. Facilitates ease of drive and integration in existing designs.

Choose the Infineon CoolMOS P7 IPU80R750P7AKMA1 for efficient, reliable semiconductor switching solutions suitable for demanding industrial and electronic power management applications. Explore EnvMart's extensive selection of semiconductors and discrete MOSFET & diode products for your project needs.

Explore more products in our MOSFET & Diode category.

Infineon CoolMOS P7 N-Channel MOSFET & Diode, 7 A, 800 V Enhancement Mode, 3-Pin TO-251 IPU80R750P7AKMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 7 A.

This MOSFET has a maximum drain-source voltage rating of 800 V.

The dimensions of the TO-251 package are 6.73 mm in length, 2.41 mm in width, and 6.22 mm in height.

It operates within a temperature range from -40°C to 150°C.

The RDS(on) resistance is 750 mΩ.

The typical gate charge (Qg) at Vgs is 17 nC.

The typical forward voltage (Vf) of the integrated diode is 900 mV.

This model uses a through-hole mounting type.

The maximum gate-source voltage rating for this MOSFET is ±20 V.

This MOSFET belongs to the CoolMOS P7 series.

It is designed for efficient flyback applications including adapters and chargers, as well as industrial power management.

The country of origin for this model is India.

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