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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IPU80R750P7AKMA1 |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-251 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 750mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 51W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
The Infineon IPU80R750P7AKMA1 is a CoolMOS P7 series N-Channel MOSFET with an integrated diode, designed for power electronics applications requiring efficient switching performance. It delivers a maximum continuous drain current of 7 A and withstands a maximum drain-source voltage of 800 V, operating in enhancement mode. The device comes in a compact 3-pin TO-251 through-hole package with dimensions of 6.73 mm length, 2.41 mm width, and 6.22 mm height, suitable for industrial, audio SMPS, LED driver, and auxiliary power supply designs.
This MOSFET provides significant improvements over its predecessor and many competitive parts, delivering efficiency gains up to 0.6% and MOSFET temperature reductions between 2°C and 8°C. Its best-in-class figure of merit for RDS(on) and Eoss along with reduced gate charge (Qg of 17 nC) optimize switching performance for higher power density applications. The integrated Zener diode ensures robust ESD protection up to Class 2 (HBM), reducing production faults and improving yield.
Ideal for industrial power management and charger designs, this device supports operation from a minimum ambient temperature of -40°C to a maximum of 150°C, making it broadly applicable in demanding environments. The typical forward voltage (Vf) is 900 mV. This MOSFET reduces BOM cost and assembly effort while improving thermal management and device reliability.
Additional key features include an RDS(on) resistance of 750 mΩ, maximum gate-source voltage rating of ±20 V, and adherence to quality standards without automotive certification. The product is engineered to support customers in fine tuning designs by providing a fully optimized portfolio, contributing to better production yields and fewer returns.
Offers best-in-class switching and conduction performance with low thermal losses. Enhances reliability with integrated Zener diode ESD protection. Supports flyback topology power supplies, chargers, and industrial power circuits.
Enables cost-efficient and high power density applications. Facilitates ease of drive and integration in existing designs.
Choose the Infineon CoolMOS P7 IPU80R750P7AKMA1 for efficient, reliable semiconductor switching solutions suitable for demanding industrial and electronic power management applications. Explore EnvMart's extensive selection of semiconductors and discrete MOSFET & diode products for your project needs.
Explore more products in our MOSFET & Diode category.
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