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Infineon CoolMOS P7 N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K2P7SAKMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.1mm |
| Length | 6.6mm |
| Model | IPSA70R1K2P7SAKMA1 |
| Width | 2.38mm |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-251 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 1.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 4.8nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 900mV |
Key Features
- Offers low on-resistance of 1.2 ohms to minimize power loss.
- Features 16 V maximum gate-source voltage for robust operation.
- Supports maximum power dissipation of 25 W with enhanced thermal behavior.
- Incorporates an integrated diode for efficient switching applications.
- Suitable for low-power SMPS, chargers, and power supply designs.
- Operates reliably between -40°C to 150°C for a wide temperature range.
- Comes in a through-hole mounting 3-pin TO-251 package for easy PCB integration.
Product Description
Infineon IPSA70R1K2P7SAKMA1 is a CoolMOS P7 series N-Channel MOSFET and diode device designed for high performance in power switching applications. It supports a maximum continuous drain current of 9.4 A and a drain-source voltage of 700 V, packaged in a compact 3-pin TO-251 through-hole format. The device operates in enhancement mode and delivers excellent efficiency with a low Rds(on) of 1.2 ohms, enhancing thermal management and reducing switching losses.
Featuring a maximum gate-source voltage of 16 V and a low forward voltage of 900 mV, this MOSFET enables efficient power transfer and reliable switching in low power switch-mode power supplies, including mobile phone chargers and notebook adapters. Its robust operation from -40°C to 150°C ensures compatibility with demanding industrial and commercial environments.
The integration of a diode within the MOSFET structure provides enhanced protection and switching performance, resulting in lower device temperature and improved efficiency compared to competing technologies. The tiny footprint and through-hole mounting simplify design and assembly for compact power electronics solutions.
Low on-resistance reduces conduction losses. High switching speed with low gate charge. Wide operating temperature range. Optimized for low power SMPS applications. Integrated diode for enhanced performance. Cost competitive with high efficiency.
Stable operation in harsh environments.
This Infineon CoolMOS P7 MOSFET model IPSA70R1K2P7SAKMA1 fits perfectly for power management in industrial, laboratory, and consumer electronic devices requiring efficient, compact switching components. For professionals seeking reliable, high-quality MOSFETs, this product offers proven technology and support through EnvMart’s extensive catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.4 A.
It has a maximum drain-source voltage rating of 700 V.
The on-resistance (Rds(on)) of this unit is 1.2 ohms.
This MOSFET operates reliably within a temperature range of -40°C to 150°C.
It comes in a TO-251 package type, designed for through-hole mounting.
The maximum power dissipation for this model is 25 W.
The maximum gate-source voltage for this MOSFET is 16 V.
The typical gate charge (Qg) at Vgs is 4.8 nC.
It is suitable for low-power switch-mode power supplies (SMPS), chargers, and power supply designs.
The forward voltage (Vf) of the integrated diode is 900 mV.
This model has a pin count of 3.
This device utilizes an N-channel configuration.
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