Infineon C7 GOLD N-Channel MOSFET & Diode, 45 A, 650 V Enhancement Mode, 10-Pin HDSOP IPDD60R150G7XTMA1

Infineon IPDD60R150G7XTMA1 is a high-performance C7 GOLD N-Channel MOSFET and diode designed to operate at 45 A maximum continuous drain current and withstand drain-source voltages up to 650 V. Packaged in a 10-pin HDSOP surface mount format, this device offers an efficient solution for power electronics applications requiring enhanced switching speeds and low conduction losses.

The device incorporates the innovative top-side cooling concept, which allows efficient thermal dissipation directly from the semiconductor to the PCB, enabling higher power density designs while overcoming typical PCB thermal limitations. Its low maximum drain source resistance (150 mΩ) and typical gate charge of 23 nC optimize switching efficiencies for applications such as power factor correction (PFC), solar inverters, server power supplies, and telecommunications equipment.

Featuring an enhancement mode channel and an inbuilt 4th pin Kelvin source, the MOSFET reduces parasitic inductances, improving electromagnetic compatibility and ease of use. The device supports a maximum power dissipation of 95 W and a maximum gate-source voltage of 20 V, ensuring robust control signal interfacing and long-term reliability. Its forward voltage drop is rated at 800 mV, minimizing energy losses during conduction.

This product complies with MSL1 moisture sensitivity level and is totally lead-free, meeting environmental regulations and standards. Although it does not adhere to automotive-specific standards, it is built to exceed quality demands for industrial and commercial power electronics.

Applications for the IPDD60R150G7XTMA1 include industrial power supplies, solar energy systems, server hardware, telecom infrastructure, and other hard-switching topologies where high efficiency and reliability are critical.

Utilizes the C7 GOLD series for superior efficiency in power applications. Enhanced channel mode providing robust switching and conduction characteristics. Compact 10-pin HDSOP surface mount package suitable for high-density PCB layouts.

Low maximum drain source resistance of 150 milliohms for reduced conduction losses. Designed with innovative top-side cooling for enhanced thermal management. Maximum power dissipation rated at 95 W, accommodating demanding applications.

Features a typical gate charge of 23 nC at 4.5 V gate-source voltage for fast switching. Forward voltage drop of 800 mV contributing to low overall power loss. Compliance with MSL1 standards and total lead-free construction.

Reliable operation ensured by maximum gate-source voltage of 20 V and Kelvin source configuration reducing parasitic inductance. Explore more power semiconductor solutions in the Infineon MOSFET & Diode category on EnvMart for efficient, reliable, and high-density electronic power designs.

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