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Infineon OptiMOS N-Channel MOSFET & Diode 40 A 40 V Enhancement Mode 8-Pin TSDSON IPZ40N04S5L4R8ATMA1

Category MOSFET & Diode Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.05mm
Length 3.3mm
Model IPZ40N04S5L4R8ATMA1
Width 3.3mm
Mount Type Surface
Series OptiMOS
Maximum Operating Temperature 175°C
Package Type TSDSON
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 40A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 4.8mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 48W
Typical Gate Charge Qg @ Vgs 22nC
Maximum Gate Source Voltage Vgs 16V
Forward Voltage Vf 1.1V

Key Features

  • The device supports a maximum continuous drain current of 40 A.
  • Maximum drain-source voltage rating is 40 V ensuring robust operation.
  • It has a low drain-source on-resistance of 4.8 milliohms for efficient conduction.
  • The package size measures 3.3 mm by 3.3 mm with a height of 1.05 mm.
  • Designed for automotive applications with AEC-Q101 qualification and RoHS compliance.
  • The MOSFET offers a maximum power dissipation of 48 watts for reliable performance.
  • Typical gate charge at Vgs is 22 nC allowing fast switching capabilities.
  • Maximum operating temperature reaches up to 175°C, suitable for harsh environments.

Product Description

Infineon IPZ40N04S5L4R8ATMA1 is an OptiMOS N-Channel MOSFET & Diode designed for high-efficiency power switching with a maximum continuous drain current of 40 A and a drain-source voltage rating of 40 V. The device uses enhancement mode operation within a compact 8-pin TSDSON surface-mount package measuring 3.3 mm by 3.3 mm and 1.05 mm in height, ideal for space-constrained electronic applications.

This MOSFET technology offers low conduction losses with a drain-source resistance of just 4.8 milliohms and improved switching behavior with a typical gate charge of 22 nC at 16 V gate-source voltage. It supports a maximum power dissipation of 48 W, ensuring reliable thermal management in demanding industrial and automotive environments. The device operates over a wide temperature range from -55°C up to 175°C, maintaining performance under harsh conditions.

Infineon's OptiMOS technology provides automotive-grade reliability with AEC-Q101 qualification and RoHS compliance. The integrated MOSFET and diode combination enables efficient power management within automotive body and motor drive applications, reducing EMI and enhancing system robustness.

The compact TSDSON package supports surface mounting for compact PCB designs, making it suitable for manufacturing in electronics, automotive, industrial controls, and power conversion systems. Forward voltage of 1.1 V reduces on-state losses, contributing to improved power efficiency.

Maximum continuous drain current of 40 A for high current applications. Drain-source voltage rating of 40 V suitable for automotive and industrial circuits. Low on-resistance of 4.8 mΩ reduces conduction losses and heat generation.

Compact 3.3 mm × 3.3 mm × 1.05 mm TSDSON package for space-efficient PCB design. AEC-Q101 automotive qualification and RoHS certified for compliance. Maximum power dissipation of 48 W supports demanding thermal loads. Typical gate charge of 22 nC enables fast switching and improved efficiency.

Wide operating temperature range from -55°C to 175°C for harsh environments. 1.1 V forward voltage drop optimizes power conversion efficiency.

Infineon OptiMOS IPZ40N04S5L4R8ATMA1 serves diverse industrial applications including automotive electronics, power management, industrial controls, and other high-performance switching requirements. The quality and performance standards meet the latest automotive and industrial demands while supporting efficient, compact designs.

Explore our offering of high-quality semiconductor solutions in the MOSFET & Diode category at EnvMart to find components like the IPZ40N04S5L4R8ATMA1 for your electronics manufacturing and design needs.

Explore more products in our MOSFET & Diode category.

Infineon OptiMOS N-Channel MOSFET & Diode 40 A 40 V Enhancement Mode 8-Pin TSDSON IPZ40N04S5L4R8ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 40 A.

It has a maximum drain-source voltage rating of 40 V.

The device features a low drain-source on-resistance of 4.8 milliohms.

The typical gate charge at Vgs is 22 nC.

The package measures 3.3 mm by 3.3 mm with a height of 1.05 mm.

It supports a maximum power dissipation of 48 watts.

The operating temperature range is from -55°C to 175°C.

It is qualified under the AEC-Q101 automotive standard.

Yes, this model is RoHS compliant.

It supports surface mounting, suitable for compact PCB designs.

It is designed for automotive applications, power management, and industrial controls.

The forward voltage drop is 1.1 V, which helps optimize power efficiency.

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