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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.05mm |
| Length | 3.3mm |
| Model | IPZ40N04S5L4R8ATMA1 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.1V |
Infineon IPZ40N04S5L4R8ATMA1 is an OptiMOS N-Channel MOSFET & Diode designed for high-efficiency power switching with a maximum continuous drain current of 40 A and a drain-source voltage rating of 40 V. The device uses enhancement mode operation within a compact 8-pin TSDSON surface-mount package measuring 3.3 mm by 3.3 mm and 1.05 mm in height, ideal for space-constrained electronic applications.
This MOSFET technology offers low conduction losses with a drain-source resistance of just 4.8 milliohms and improved switching behavior with a typical gate charge of 22 nC at 16 V gate-source voltage. It supports a maximum power dissipation of 48 W, ensuring reliable thermal management in demanding industrial and automotive environments. The device operates over a wide temperature range from -55°C up to 175°C, maintaining performance under harsh conditions.
Infineon's OptiMOS technology provides automotive-grade reliability with AEC-Q101 qualification and RoHS compliance. The integrated MOSFET and diode combination enables efficient power management within automotive body and motor drive applications, reducing EMI and enhancing system robustness.
The compact TSDSON package supports surface mounting for compact PCB designs, making it suitable for manufacturing in electronics, automotive, industrial controls, and power conversion systems. Forward voltage of 1.1 V reduces on-state losses, contributing to improved power efficiency.
Maximum continuous drain current of 40 A for high current applications. Drain-source voltage rating of 40 V suitable for automotive and industrial circuits. Low on-resistance of 4.8 mΩ reduces conduction losses and heat generation.
Compact 3.3 mm × 3.3 mm × 1.05 mm TSDSON package for space-efficient PCB design. AEC-Q101 automotive qualification and RoHS certified for compliance. Maximum power dissipation of 48 W supports demanding thermal loads. Typical gate charge of 22 nC enables fast switching and improved efficiency.
Wide operating temperature range from -55°C to 175°C for harsh environments. 1.1 V forward voltage drop optimizes power conversion efficiency.
Infineon OptiMOS IPZ40N04S5L4R8ATMA1 serves diverse industrial applications including automotive electronics, power management, industrial controls, and other high-performance switching requirements. The quality and performance standards meet the latest automotive and industrial demands while supporting efficient, compact designs.
Explore our offering of high-quality semiconductor solutions in the MOSFET & Diode category at EnvMart to find components like the IPZ40N04S5L4R8ATMA1 for your electronics manufacturing and design needs.
Explore more products in our MOSFET & Diode category.
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