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Infineon HEXFET N-Channel MOSFET & Diode 180 A 100 V Enhancement 3-Pin TO-247 AUIRFP4110
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.31mm |
| Length | 15.87mm |
| Model | AUIRFP4110 |
| Width | 20.7mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 370W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The MOSFET features ultra-low on-resistance and enhances efficiency with fast switching speed.
- It supports high maximum continuous drain current of 180 A and drain-source voltage of 100 V.
- The device operates with a maximum power dissipation of 370 W and junction temperature up to 175°C.
- Designed with a durable TO-247 package suitable for through-hole mounting and equipped with 3 pins.
- It includes automotive standard certification AEC-Q101, ensuring reliability in automotive systems.
- Typical gate charge is 150 nC at gate-source voltage of 15 V, enabling controlled switching.
- Maximum gate-source voltage is 20 V and forward voltage of the diode is 1.3 V.
- Operating temperature range extends from -55°C to 175°C for robust environmental performance.
Product Description
Infineon AUIRFP4110 is a high-performance HEXFET N-Channel MOSFET and Diode tailored for automotive applications and broader industrial use. This component is engineered to provide extremely efficient switching with ultra-low on-resistance and fast switching capabilities, supporting a maximum continuous drain current of 180 A and drain-source voltage of 100 V. Packaged in a robust TO-247 through-hole mount of 3 pins, it ensures ease of integration into various power systems.
The device’s enhanced design enables an operating junction temperature of up to 175°C, making it well suited for demanding automotive and industrial environments. It features a maximum power dissipation rating of 370 W, allowing for high power handling and reliability over extended usage.
Key electrical characteristics include a typical gate charge of 150 nC at a gate-source voltage of 15 V which helps to maintain efficient switching speeds while minimizing losses. The maximum gate-source voltage rating is 20 V, and the integrated diode has a forward voltage drop of 1.3 V, optimizing performance in power circuits.
The MOSFET complies with the automotive standard AEC-Q101, ensuring strict quality and reliability criteria for use in automotive systems. Physically, the component measures 15.87 mm in length, 20.7 mm in width, and 5.31 mm in height, fitting standard industry footprint requirements.
This versatile MOSFET and diode combination is suitable for a wide range of applications including automotive electronics, power management systems, industrial power supplies, and other environments demanding robust switching performance and reliability.
The HEXFET design reduces conduction losses and improves efficiency in power circuits. High current capability supports heavy-duty automotive and industrial loads. Wide operating temperature range offers durability in harsh conditions.
Package design facilitates easy installation and thermal management. Complies with AEC-Q101 automotive standards for reliability assurance. Fast switching speed contributes to power conversion efficiency. Enhanced avalanche rating improves robustness against electrical stress.
Low gate charge minimizes switching losses during operation. Compact form factor fits typical TO-247 mounting arrangements. Explore more components and solutions in the Electronics & Electricals section at EnvMart for reliable semiconductor devices.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 180 A.
The maximum drain-source voltage rating is 100 V.
It has a maximum power dissipation capacity of 370 W.
The typical gate charge at a gate-source voltage of 15 V is 150 nC.
The dimensions of the TO-247 package are 15.87 mm in length, 20.7 mm in width, and 5.31 mm in height.
The maximum operating temperature for this device is 175°C.
This MOSFET complies with the automotive standard AEC-Q101.
The forward voltage drop of the integrated diode is 1.3 V.
The minimum operating temperature for this MOSFET is -55°C.
The TO-247 package has 3 pins.
The channel type of this MOSFET is N-channel.
This model uses a through-hole mounting type.
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