ROHM Insulated Gate Bipolar Transistor IGBT 30 A 600 V 3-Pin TO-247GE Through Hole RGCL60TS60DGC13

The ROHM RGCL60TS60DGC13 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient switching of high currents and voltages. This device supports a maximum continuous collector current of 30 A and a collector-emitter voltage rating of 600 V, making it suitable for demanding power electronics and industrial control systems.

Its TO-247GE package with through-hole mounting provides mechanical stability and ease of integration on PCB designs. The transistor features a low collector-emitter saturation voltage of 1.4 V, which contributes to reducing conduction losses and improving overall system efficiency. The maximum power dissipation rating of 111 W facilitates effective thermal management in high power environments.

This IGBT also incorporates a built-in very fast and soft recovery freewheeling diode (FRD), which enhances switching characteristics and reduces switching losses. The gate-emitter voltage tolerance of ±30 V ensures reliable gate control flexibility while maintaining device safety.

Designed to function under wide operating temperatures from -40°C up to 175°C, this semiconductor component is RoHS compliant and Pb-free, aligning with environmental and regulatory standards.

Common use cases include industrial motor drives, power inverters, energy management systems, welding machines, and switching power supplies where high voltage and current performance are critical. The robust construction and efficient characteristics make ROHM's RGCL60TS60DGC13 an excellent choice for industrial, laboratory, HVAC, manufacturing, and power control applications.

Maximum continuous collector current of 30 A ensures robust current handling. Collector-emitter voltage rating of 600 V supports high-voltage applications. Maximum power dissipation of 111 W allows efficient thermal management.

Package type TO-247GE with through-hole mounting for secure installation. Maximum gate-emitter voltage rated at ±30 V for flexible gate drive control. Collector-emitter saturation voltage (VceSAT) of 1.4 V reduces conduction losses.

Operates reliably in wide temperature range from -40°C to 175°C. RoHS compliant with Pb-free lead plating for environmental safety. Includes built-in very fast and soft recovery freewheeling diode (FRD) for switching efficiency.

Ideal for industrial, power control, and energy-saving applications. Explore more IGBT components and other semiconductor products on EnvMart to find compatible solutions for high efficiency and reliable power electronics design.