DiodesZetex P-Channel MOSFET, 9.9 A, 40 V Enhancement Mode, 3-Pin TO-252 ZXMP4A16KTC

DiodesZetex ZXMP4A16KTC P-Channel MOSFET is a high-performance enhancement mode transistor supplied in a 3-pin TO-252 surface mount package. Rated at 9.9 amperes continuous drain current and 40 volts drain-source voltage, this device is designed for power switching and amplification applications in electronic components and power distribution systems.

The MOSFET features a low on-resistance (Rds) of 100 milliohms, minimizing power losses and heat generation when operating at high currents. It supports a maximum power dissipation of 9.5 watts, suitable for moderate power levels in compact electronics.

The device's typical gate charge of 29.6 nanocoulombs allows for efficient switching performance with minimal gate drive requirements. Its wide operating temperature range, from -55°C to 150°C, makes it reliable in harsh environments and industrial applications.

With maximum gate-source voltage ratings of -20 to +20 volts, the MOSFET ensures robust handling of gate signals without degradation. Its compact physical dimensions facilitate space-saving designs in printed circuit boards, suited for industrial, manufacturing, laboratory, and commercial electronics systems.

Maximum continuous drain current of 9.9 A. Maximum drain-source voltage of 40 V. TO-252 3-pin surface mount package. Maximum drain-source resistance of 100 mΩ. Maximum power dissipation of 9.5 W. Typical gate charge of 29.6 nC.

Operating temperature range -55°C to 150°C. Gate-source voltage maximum ±20 V. Compact size: 6.73 mm length × 6.22 mm width × 2.39 mm height. Manufactured in China.

This P-Channel MOSFET is ideal for integration into various electronic circuits where reliable switching and amplification are required with a balance of power and size. It is well suited for industrial and electronic component applications requiring durability and consistent performance. Explore more devices like this in EnvMart's Semiconductor category for tailored solutions.