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DiodesZetex N-Channel MOSFET 5.6 A 60 V Enhancement Mode Surface Mount SOT-223 DMN6068SE-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.65mm
Length 6.7mm
Model DMN6068SE-13
Width 3.7mm
Mount Type Surface
Series DMN6068SE
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 5.6A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 100mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.7W
Typical Gate Charge Qg @ Vgs 10.3nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.15V

Key Features

  • Maximum continuous drain current of 5.6 amperes ensures efficient switching performance.
  • Designed for surface mount with a compact SOT-223 4-pin package for easy PCB integration.
  • Maximum drain-source voltage of 60 volts supports robust operation in various circuits.
  • Low on resistance of 100 milliohms minimizes power loss during conduction.
  • Enhanced mode N-Channel MOSFET suitable for power and switching applications.
  • Maximum power dissipation of 3.7 watts allows reliable thermal performance.
  • Operating temperature range from -55°C up to 150°C ensures durability in harsh environments.
  • Typical gate charge of 10.3 nanocoulombs provides fast switching capabilities.

Product Description

DiodesZetex DMN6068SE-13 is a high-performance N-Channel MOSFET designed for efficient switching and power management in electronic circuits. It features a maximum continuous drain current of 5.6 amperes and a drain-source voltage rating of 60 volts, making it suitable for moderate power applications.

Encapsulated in a compact 4-pin SOT-223 surface mount package, this MOSFET offers low resistance of 100 milliohms, which helps reduce conduction losses and improve overall circuit efficiency. Its enhancement mode channel provides reliable operation in switching and amplification tasks.

The transistor supports a maximum power dissipation of 3.7 watts and operates reliably within a wide temperature range from -55°C to 150°C. This tolerance makes it well-suited for industrial, automotive, and commercial electronics applications requiring durable semiconductor components.

The typical gate charge of 10.3 nanocoulombs enables fast switching speeds, essential for power management and efficient energy conversion. Additionally, it complies with the automotive standard AEC-Q101, underscoring its robustness for vehicle electronics systems.

Compact physical dimensions of 6.7 mm length, 3.7 mm width, and 1.65 mm height facilitate efficient PCB space usage in circuit designs. This MOSFET is widely used in power control, switching regulators, load switch circuits, and motor control applications.

Maximum continuous drain current of 5.6 A for reliable operation. Surface mount 4-pin SOT-223 package for easy assembly. Drain-source voltage rated at 60 V for moderate power circuits. Low Rds(on) resistance of 100 mΩ to minimize losses.

Operates across -55°C to 150°C temperature range. Conforms to automotive AEC-Q101 quality standard. Typical gate charge of 10.3 nC for fast switching. Power dissipation rating of 3.7 W for thermal reliability. Compact dimensions optimize PCB layout.

This DiodesZetex N-Channel MOSFET DMN6068SE-13 is suitable for numerous industrial applications including automotive electronics, power management circuits, and precision switching tasks. It combines durability, efficiency, and compactness, making it a reliable semiconductor device for complex electronic designs.

Discover more components and electronics at EnvMart to support your industrial, automotive, and manufacturing projects.

DiodesZetex N-Channel MOSFET 5.6 A 60 V Enhancement Mode Surface Mount SOT-223 DMN6068SE-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.6 amperes, ensuring efficient switching performance.

The maximum drain-source voltage rating for this MOSFET is 60 volts, suitable for moderate power applications.

This model comes in a compact SOT-223 surface mount package, designed for easy PCB integration.

The typical gate charge for the DMN6068SE-13 is 10.3 nanocoulombs, which facilitates fast switching capabilities.

It operates reliably within a temperature range from -55°C to 150°C, making it suitable for harsh environments.

The maximum power dissipation rating for this MOSFET is 3.7 watts, allowing for reliable thermal performance.

The DMN6068SE-13 features a low on-resistance of 100 milliohms, which minimizes power loss during conduction.

This model complies with the automotive standard AEC-Q101, ensuring robustness for vehicle electronics systems.

This MOSFET has a pin count of 4, suitable for various circuit designs.

The forward voltage for the DMN6068SE-13 is 1.15 volts, which is relevant for its operation in circuits.

The dimensions of this model are 6.7 mm in length, 3.7 mm in width, and 1.65 mm in height, optimizing PCB layout.

It is suitable for applications including power control, switching regulators, load switch circuits, and motor control.

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