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DiodesZetex Type P-Channel MOSFET 3.8 A 30 V Enhancement 3-Pin SOT-23 DMP3098L

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMP3098L
Width 1.4mm
Mount Type Surface
Series DMP3098L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 3.8A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 120mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.08W
Typical Gate Charge Qg @ Vgs 7.8nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.26V

Key Features

  • Features a maximum continuous drain current of 3.8 amperes.
  • Operates at a maximum drain-source voltage of 30 volts.
  • Has a low maximum drain-source resistance of 120 milliohms.
  • Supports maximum power dissipation up to 1.08 watts.
  • Typical gate charge is 7.8 nanocoulombs at specified gate voltage.
  • Temperature range supports operation from -55°C to 150°C.
  • Complies with automotive standard AEC-Q101 for reliability.
  • Designed for enhancement mode operation with P-channel type.

Product Description

DiodesZetex DMP3098L is a type P-Channel MOSFET transistor with a continuous drain current rating of 3.8 amperes and a maximum drain-source voltage of 30 volts. This device operates in enhancement mode and is packaged in a three-pin SOT-23 surface mount case, making it suitable for compact electronic designs.

With a low maximum drain-source resistance of 120 milliohms, this MOSFET ensures efficient switching and minimal conduction losses. It can dissipate up to 1.08 watts of power under standard operating conditions. The typical gate charge of 7.8 nanocoulombs at the specified gate voltage allows for rapid switching speeds in power management and control circuits.

The device supports a wide temperature operating range from -55 degrees Celsius up to 150 degrees Celsius and meets the automotive quality standard AEC-Q101, ensuring suitability for automotive and industrial environments where reliability is critical.

Physical dimensions of the MOSFET are 3 mm in length, 1.4 mm in width, and 1.1 mm in height, ideal for densely populated PCB layouts.

The DMP3098L MOSFET is primarily used in applications such as power switching, voltage regulation, electronic load drivers, and other discrete semiconductor roles in automotive, industrial, and consumer electronics sectors.

As a surface mount transistor with a robust gate voltage rating of -20 to +20 volts, the device is engineered for dependable operation in demanding electrical environments. Features a maximum continuous drain current of 3.8 amperes.

Operates at a maximum drain-source voltage of 30 volts. Has a low maximum drain-source resistance of 120 milliohms. Supports maximum power dissipation up to 1.08 watts. Typical gate charge is 7.8 nanocoulombs at specified gate voltage.

Temperature range supports operation from -55°C to 150°C. Complies with automotive standard AEC-Q101 for reliability. Compact dimensions: length 3 mm, width 1.4 mm, height 1.1 mm. Designed for enhancement mode operation with P-channel type.

Maximum gate-source voltage rating of -20 V to +20 V ensures robustness. Explore additional DiodesZetex MOSFETs and related semiconductor components for your industrial and electronic applications at EnvMart.

DiodesZetex Type P-Channel MOSFET 3.8 A 30 V Enhancement 3-Pin SOT-23 DMP3098L
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Frequently Asked Questions

The DMP3098L has a maximum continuous drain current rating of 3.8 amperes.

It operates at a maximum drain-source voltage of 30 volts.

The maximum power dissipation supported by this model is up to 1.08 watts.

The typical gate charge at the specified gate voltage is 7.8 nanocoulombs.

This MOSFET has dimensions of 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

It supports an operating temperature range from -55°C to 150°C.

This model is designed for surface mounting.

It complies with the automotive standard AEC-Q101 for reliability.

The maximum gate-source voltage rating is -20 to +20 volts.

It has a low maximum drain-source resistance of 120 milliohms.

This MOSFET is primarily used in power switching, voltage regulation, and electronic load drivers, among other roles in automotive and industrial applications.

It features a P-channel type designed for enhancement mode operation.

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