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DiodesZetex N-Channel MOSFET 60 V, 300 mA, Enhancement Mode, SC-70 Package DMN601WK-7

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DiodesZetex N-Channel MOSFET 60 V, 300 mA, Enhancement Mode, SC-70 Package DMN601WK-7

Name: DiodesZetex N-Channel MOSFET 60 V, 300 mA, Enhancement Mode, SC-70 Package DMN601WK-7
Brand: DiodesZetex
SKU: 225948
Price: 0.11 USD
Availability: InStock

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Category MOSFETs Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1mm
Length	2.2mm
Model	DMN601WK-7
Width	1.35mm
Mount Type	Surface
Series	DMN601WK
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-65°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	300mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	200mW
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

This enhancement-mode MOSFET features a low maximum drain-source resistance of 3 ohms.
It has a maximum power dissipation of 200 mW supporting efficient thermal management.
The device operates from -65°C up to 150°C for high reliability in extreme conditions.
Compact SC-70 surface-mount package with dimensions 2.2 mm length, 1.35 mm width, and 1 mm height.
Maximum gate-source voltage range of -20 V to +20 V allowing flexible gate drive options.
Automotive grade AEC-Q101 certification ensures suitability for robust automotive applications.
Ideal for use in low-voltage switching, amplification, and driver circuits in electronics and industrial equipment.

Product Description

DiodesZetex DMN601WK-7 is a N-Channel MOSFET designed for efficient switching applications, packaged in a compact SC-70 form factor. It supports a continuous drain current of 300 mA and a maximum drain-source voltage of 60 V, making it suitable for low-power electronic devices, industrial control, and automotive electronics.

The enhancement-mode transistor features a very low drain-source resistance of 3 ohms which improves conduction efficiency and reduces power loss. It can safely dissipate up to 200 mW of power, allowing stable operation under typical electrical loads.

Its operating temperature range from -65°C to +150°C ensures reliable performance in harsh environments. The device’s maximum gate-source voltage spans from -20 V to +20 V, providing versatility in control signal levels.

The small SC-70 surface mount package measures just 2.2 mm by 1.35 mm by 1 mm, allowing for space-saving PCB designs in compact electronic assemblies. This MOSFET also carries the automotive standard AEC-Q101 certification, attesting to its quality and reliability for automotive system integration.

This component is ideally suited for discrete semiconductor needs in electronic manufacturing, industrial automation, and automotive circuit designs where compact size and efficient switching are critical.

This enhancement-mode MOSFET features a low maximum drain-source resistance of 3 ohms. It has a maximum power dissipation of 200 mW supporting efficient thermal management. The device operates from -65°C up to 150°C for high reliability in extreme conditions.

Compact SC-70 surface-mount package with dimensions 2.2 mm length, 1.35 mm width, and 1 mm height. Maximum gate-source voltage range of -20 V to +20 V allowing flexible gate drive options. Automotive grade AEC-Q101 certification ensures suitability for robust automotive applications.

Ideal for use in low-voltage switching, amplification, and driver circuits in electronics and industrial equipment. Explore more DiodesZetex semiconductor solutions and related components for advanced electronic and automotive applications on EnvMart.

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