Vishay 120 V 60 A Trench MOS Barrier Schottky Rectifier Through Hole, TO-220F Package VF60120C-M3/4W

Vishay VF60120C-M3/4W is a robust 120 V 60 A Schottky rectifier diode designed for high efficiency power management in industrial, electronic, and power supply applications. Utilizing the Trench MOS Barrier Schottky (TMBS) technology, this device minimizes minority carrier injection to the drift region, leading to reduced stored charge and enhanced switching speeds.

The rectifier comes in a TO-220F through-hole package with a common cathode diode configuration and three pins, ideal for assembly in power electronics circuits requiring efficient rectification with minimal power loss. Operating temperature capabilities range from -40°C to 150°C, making it suitable for harsh environments and extended duty cycles.

Its electrical ratings include a maximum continuous forward current of 60 A, a peak reverse repetitive voltage of 120 V, a peak non-repetitive forward surge current of 300 A, and a low forward voltage drop of 950 mV, all contributing to the device's superior performance in AC/DC switched mode power supplies, DC/DC converters, and other power electronics systems.

The compact physical dimensions (15.24 mm height, 10.26 mm length, 4.83 mm width) make it suitable for dense assembly designs without compromising heat dissipation. The device is built to international standards such as UL 94 V-0, WEEE, IEC 61249-2-21, JESD certifications, and RoHS compliance, assuring quality and environmental responsibility.

This Vishay rectifier supports industrial, laboratory, HVAC, manufacturing, automotive (non-automotive approved), and water treatment applications where efficient power rectification is critical to system reliability and performance. Its patented trench barrier architecture enhances switching speed and energy efficiency superior to planar Schottky types at voltages above 45 V.

Supports maximum continuous forward current up to 60 A. Peak reverse repetitive voltage rating of 120 V. Low maximum forward voltage of 950 mV reduces power dissipation. Wide operating temperature range from -40°C to 150°C.

Patented trench MOS barrier technology improves switching performance. Three-pin common cathode diode configuration in TO-220F package. Withstands peak non-repetitive forward surge current of 300 A. Certified to UL 94 V-0, RoHS, and other international standards.

Compact dimensions ensure easy integration in power modules. Manufactured in China with Vishay quality assurance. Explore the full range of Schottky Diodes & Rectifiers on EnvMart for premium electronic components tailored to advanced power electronics and semiconductor needs.

Explore more products in our Schottky Diodes & Rectifiers category.