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onsemi Darlington Transistor NPN 3-Pin TO-247 20 A 100 V 160 W MJH6284G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.08mm
Length 16.26mm
Model MJH6284G
Mount Type Through Hole
Series MJH6284
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 20A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 5mA
Maximum Power Dissipation Pd 160W
onsemi MJH6284G 1 Darlington Transistor NPN, 20 A 100 V HFE 100, 3-Pin TO-247

Key Features

  • Maximum continuous collector current of 20 amperes.
  • Maximum collector emitter voltage rating of 100 volts.
  • Package type TO-247 with through hole mount.
  • Minimum DC current gain (hFE) of 100 ensuring efficient amplification.
  • Maximum power dissipation of 160 watts for robust thermal management.
  • Transistor polarity is NPN with 3-pin configuration.
  • Operating temperature range from -65°C to 150°C for industrial reliability.
  • Maximum collector emitter saturation voltage (VceSAT) of 2 volts.

Product Description

onsemi MJH6284G is a high-performance NPN Darlington transistor designed for power applications requiring high current and voltage ratings. This transistor features a maximum continuous collector current of 20 A and maximum collector emitter voltage of 100 V, making it suitable for industrial, electrical power control, and switching circuits.

Housed in a TO-247 package for enhanced thermal dissipation and through-hole mounting, the device ensures effective heat management with a maximum power dissipation of 160 W. The minimum DC current gain (hFE) of 100 provides efficient signal amplification necessary in power switching and amplification tasks.

The transistor is designed to function reliably in harsh environments with an operating temperature range from -65°C to 150°C. Its 3-pin configuration and compact size (21.08 mm height, 16.26 mm length) make it adaptable to a variety of PCB layouts and electrical designs.

This NPN Darlington transistor is ideal for industrial, power management, motor control, HVAC systems, and other commercial electronic equipment requiring high current and voltage handling capabilities.

Maximum continuous collector current of 20 amperes. Maximum collector emitter voltage: 100 volts. Package type TO-247 with through-hole mount features. Minimum DC current gain (hFE) rating of 100. Maximum power dissipation of 160 watts.

Operating temperature range from -65°C to 150°C. 3-pin configuration with NPN polarity. Maximum collector emitter saturation voltage is 2 volts. Compact dimensions suitable for various applications. Maximum collector cut-off current is 5 mA.

This product is supplied new and is made in India or under the brand's quality assurance. It aligns with demanding industrial and electronic component requirements. Explore more high-quality Darlington Transistors and semiconductor components for your projects on EnvMart.

onsemi Darlington Transistor NPN 3-Pin TO-247 20 A 100 V 160 W MJH6284G
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Frequently Asked Questions

The maximum continuous collector current for this model is 20 amperes.

This transistor has a maximum collector emitter voltage rating of 100 volts.

It has a maximum power dissipation of 160 watts, allowing for effective thermal management.

The minimum DC current gain (hFE) for this model is 100, ensuring efficient amplification.

The operating temperature range for this transistor is from -65°C to 150°C.

It is housed in a TO-247 package, which is designed for through-hole mounting.

This model features a 3-pin configuration with NPN polarity.

The maximum collector emitter saturation voltage (VceSAT) for this transistor is 2 volts.

The dimensions of this model are 21.08 mm in height and 16.26 mm in length.

The maximum collector cut-off current for this transistor is 5 mA.

The maximum emitter base voltage (VEBO) for this model is 5 volts.

This product is manufactured in India.

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