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onsemi Isolated PowerTrench Dual Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement 6-Pin SOT-23 FDC6333C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC6333C |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 220mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 4.7nC |
| Maximum Gate Source Voltage Vgs | -25, -16, +16, +25V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- Features dual isolated PowerTrench technology for enhanced efficiency and power density.
- Supports a maximum continuous drain current of 2.5 Amperes.
- Operates within a drain-source voltage up to 30 Volts.
- Packaged in a compact 6-pin SOT-23 surface mount package.
- Has a low on-resistance of 220 milliohms ensuring low power loss.
- Enables fast switching with low gate charge of 4.7 nanocoulombs at Vgs.
- Workable in a wide temperature range from -55°C to 150°C.
- Includes a soft reverse recovery body diode for efficient synchronous rectification.
Product Description
onsemi FDC6333C Isolated PowerTrench Dual Type P, Type N-Channel MOSFET is a high-performance transistor tailored for power switching in electronic circuits requiring efficient operation at 2.5A and 30V ratings.
This MOSFET incorporates advanced isolated PowerTrench technology, combining low gate charge and soft reverse recovery body diode for fast switching, promoting increased system efficiency and power density.
The device is encased in a compact 6-pin SOT-23 package suitable for surface mounting. It features a channel configuration of Type P and Type N enhancement mode, optimized for switching applications.
It supports a maximum continuous drain current of 2.5 Amperes and a maximum drain-source voltage of 30 Volts. Its low on-resistance of 220 milliohms minimizes conduction losses, improving overall energy efficiency.
The shielded-gate architecture reduces switching losses significantly, reducing the figure of merit (FOM). The device operates reliably between -55°C and 150°C, suitable for demanding industrial and commercial environments.
Applications include synchronous rectification in AC/DC power supplies, power management in electronic systems, and other industrial and manufacturing electronics requiring efficient MOSFET switching action.
Features dual isolated PowerTrench technology for enhanced efficiency and power density. Supports a maximum continuous drain current of 2.5 Amperes. Operates within a drain-source voltage up to 30 Volts. Packaged in a compact 6-pin SOT-23 surface mount package.
Has a low on-resistance of 220 milliohms ensuring low power loss. Enables fast switching with low gate charge of 4.7 nanocoulombs at Vgs. Workable in a wide temperature range from -55°C to 150°C. Includes a soft reverse recovery body diode for efficient synchronous rectification.
Typical forward voltage is 0.8 Volts for improved performance. Designed with shielded-gate structure to reduce figure of merit (FOM) for optimized switching. This MOSFET is part of onsemi’s broad portfolio targeting power switching solutions for electronic, industrial, and commercial applications.
Browse more semiconductor components and MOSFET devices in the Electronics & Electricals section on EnvMart.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 2.5 Amperes.
It operates within a maximum drain-source voltage of 30 Volts.
The on-resistance is 220 milliohms, which helps minimize conduction losses.
It can operate reliably within a temperature range from -55°C to 150°C.
This model is packaged in a compact 6-pin SOT-23 surface mount package.
The typical gate charge at Vgs is 4.7 nanocoulombs.
It has a pin count of 6.
It features a dual channel configuration of Type P and Type N enhancement mode.
The typical forward voltage is 0.8 Volts.
The maximum power dissipation is rated at 960 milliwatts.
It is suitable for synchronous rectification in AC/DC power supplies and power management in electronic systems.
It is designed with a shielded-gate architecture to reduce switching losses.
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