Infineon ISZ080N10 Industrial N-Channel Power MOSFET 75 A 100 V 8-Pin TSDSON ISZ080N10NM6ATMA1

Infineon ISZ080N10NM6ATMA1 is an N-channel power MOSFET engineered for demanding industrial and commercial applications requiring efficient high-speed switching, such as telecommunications, server power supplies, solar technology, power tools, and drones.

This device leverages Infineon’s OptiMOS™ 6 technology, which utilizes a leading thin wafer process to deliver superior performance characterized by low conduction and switching losses, facilitating higher efficiency in power management systems.

The MOSFET supports a maximum continuous drain current of 75 A and a drain-source voltage rating of 100 V, making it suitable for high current and voltage applications. It is housed in an 8-pin TSDSON (Thin Shrink Small Outline No-Lead) package with compact dimensions of 3.4 mm length, 3.4 mm height, and 1.1 mm width, allowing for space-efficient PCB designs.

Operating temperature ranges from -55°C to 175°C, permitting reliable function in harsh environments. It features a typical gate charge of 24 nC at gate-source voltage and a maximum gate-source voltage rating of 20 V. The maximum power dissipation rating is 100 W, supporting robust load handling.

Additional advantages include a high avalanche energy rating for surge robustness and a low forward voltage drop of 1 V to minimize power losses. This product is RoHS compliant, reflecting adherence to environmental standards.

Designed for high switching frequency applications including telecom and server power supplies. Utilizes advanced OptiMOS™ 6 thin wafer technology for enhanced performance. Features low conduction losses and low switching losses to improve efficiency.

High avalanche energy rating supports robust operation under high stress. Compact and efficient 8-pin TSDSON surface mount package. Wide operating temperature range from -55°C to 175°C. Maximum continuous drain current: 75 A, Maximum drain-source voltage: 100 V.

Typical gate charge: 24 nC, Maximum gate-source voltage: 20 V. Maximum power dissipation: 100 W, Forward voltage drop: 1 V. RoHS compliant and environmentally friendly.

This MOSFET is ideal for industrial, telecommunications, server power supply, solar power, power tool, and drone applications requiring high-frequency switching with enhanced efficiency and robust operating capability.

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