Infineon IST N-Channel MOSFET 475 A 40 V Enhancement Mode 5-Pin HSOF IST006N04NM6AUMA1

Infineon IST006N04NM6AUMA1 is a high-current N-Channel MOSFET designed for demanding power management applications. Rated for 475 A continuous drain current and 40 V drain-source voltage, this enhancement mode transistor is highly optimized for low voltage motor drives and battery-powered systems. The MOSFET features an industry-standard 5-pin HSOF surface mount package allowing easy integration into modern PCBs.

This device excels in minimizing energy losses with a low on-resistance of 0.6 milliohms at rated current, which significantly reduces heat generation and improves efficiency. With a maximum power dissipation of 250 W, the IST006N04NM6AUMA1 is suitable for high performance industrial and automotive environments where reliability and thermal management are crucial.

Its operating temperature range from -55°C to 175°C enables deployment in harsh conditions. The typical gate charge of 178 nC ensures efficient switching characteristics while the maximum gate-source voltage rating of 20 V provides safe gate drive limits. The compact package dimensions of 7.2 mm height, 2.4 mm width, and 6.9 mm length facilitate space-saving designs.

This MOSFET is 100% avalanche tested, ensuring robustness against voltage spikes common in motor drive and battery applications. The Infineon IST series is well known for consistent quality and robustness, making this device an ideal choice for engineers developing efficient power electronics, battery protection circuits, and motor controllers.

Maximum continuous drain current of 475 A provides strong power handling capability. Low RDS(on) of 0.6 mΩ reduces conduction losses and increases efficiency. Maximum drain-source voltage of 40 V suits low voltage power systems.

HSOF package with 5 pins designed for surface mounting on PCB. Wide temperature range (-55°C to 175°C) supports industrial applications. Typical gate charge of 178 nC enables efficient switching performance. Maximum gate-source voltage of 20 V provides safe gate control limits.

Compact dimensions: 7.2 mm height, 2.4 mm width, 6.9 mm length optimize board space. 100% avalanche tested for superior ruggedness and reliability.

This product is part of EnvMart's semiconductor selection catering to industrial-grade power management solutions. Browse our MOSFET category for compatible components from top manufacturers like Infineon, suitable for diverse electronics and electrical applications.