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onsemi NPN Darlington Transistor 5A 100V TO-220 Package 3-Pin HFE 1000 TIP122G

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onsemi NPN Darlington Transistor 5A 100V TO-220 Package 3-Pin HFE 1000 TIP122G

Name: onsemi NPN Darlington Transistor 5A 100V TO-220 Package 3-Pin HFE 1000 TIP122G
Brand: onsemi
SKU: 219526
Price: 0.44 USD
Availability: InStock

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Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	4.82mm
Length	15.75mm
Model	TIP122G
Mount Type	Through Hole
Series	TIP122
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	5A
Maximum Collector Emitter Voltage Vceo	100V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	1000
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	2V
Maximum Collector Base Voltage VCBO	100V
Maximum Collector Cut-off Current	0.5mA
Maximum Power Dissipation Pd	65W
onsemi TIP122G NPN Darlington Pair, 8 A 100 V HFE	1000, 3-Pin TO-220Brand: ON Semiconductor
onsemi TIP122G 1 Darlington Transistor NPN, 5 A 100 V HFE	1000, 3-Pin TO-220

Key Features

This transistor features a minimum DC current gain (hFE) of 1000.
The package type is TO-220 suitable for through-hole mounting.
Designed with a 3-pin configuration for easy circuit integration.
Maximum power dissipation of 65 Watts ensures reliable operation under load.
Operates within temperatures ranging from -65°C to 150°C for broad environmental compatibility.
Transistor polarity is NPN, useful for switching and amplification applications.
Maximum saturation voltage across collector-emitter is 2V.
Suitable for electronic and power semiconductor applications requiring Darlington transistors.

Product Description

The onsemi TIP122G is a high-gain NPN Darlington Transistor designed for applications requiring a maximum continuous collector current of 5 amperes and a collector-emitter voltage rating of 100 volts. Packaged in a TO-220 3-pin housing, it supports through-hole mounting for stable mechanical installation.

This transistor offers a minimum DC current gain (hFE) of 1000, making it well-suited for amplification and switching tasks where high gain and current capability are required. It has a maximum power dissipation rating of 65 watts, ensuring durability under demanding operating conditions.

The device operates reliably over a wide temperature range from -65°C minimum to 150°C maximum, allowing deployment in varying industrial and electronic environments. Maximum emitter base voltage is 5 volts, and the collector-emitter saturation voltage is up to 2 volts, characteristics vital for designing efficient circuits.

Compact in size with a height of 4.82mm and length of 15.75mm, the TIP122G transistor supports integration into diverse circuit boards and systems. It features NPN polarity, which is widely used in electronic component designs for switching and amplification.

This transistor is ideal for use in automotive, industrial, laboratory, and general electronics projects that require reliable, high-performance power semiconductors. Its robust specifications enable use in power regulation, amplification, and switching applications.

High DC current gain of 1000 for excellent amplification. Capable of handling 5 amperes continuous collector current. Wide operating temperature range of -65°C to 150°C. TO-220 package with through-hole mounting for ease of use.

Compact dimensions for flexible circuit design. Maximum collector-emitter voltage rated at 100 volts. Efficient power dissipation with 65 watts rating. 3-pin configuration supporting standard transistor connections. Explore more semiconductors and electronic components on EnvMart for your industrial and electronic design needs.