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Vishay TrenchFET N-Channel MOSFET 19 A 40 V Enhancement 8-Pin SOIC SI4840BDY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI4840BDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, JEDEC JS709A, Halogen Free (IEC 61249-2-21) |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.012Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET uses TrenchFET technology to provide low on-resistance and high efficiency.
- It features an 8-pin SOIC surface mount package for easy PCB integration.
- The device operates within a wide temperature range from -55°C to 150°C.
- Typical gate charge is 33nC at a gate-source voltage of 3 V.
- The maximum power dissipation is 6 W, ensuring reliable performance under load.
- Forward voltage drop is 1.2 V, minimizing conduction losses during operation.
- It complies with RoHS, JEDEC JS709A, and IEC 61249-2-21 standards and is halogen free.
- Designed for use in power management, switching, and amplification circuits in industrial and commercial electronics.
Product Description
Vishay SI4840BDY-T1-GE3 is a high-performance TrenchFET N-Channel MOSFET featuring a maximum continuous drain current of 19 A and a drain-source voltage of 40 V. This enhancement mode transistor is housed in an 8-pin SOIC surface mount package, offering a compact and reliable solution for efficient power switching applications.
Its TrenchFET structure provides very low on-resistance of 0.012 ohms, allowing for minimal power losses and high efficiency in power control circuits. The device supports a wide operating temperature range from -55°C to 150°C, making it suitable for demanding industrial and commercial environments.
The typical gate charge of 33nC at 3 V gate-source voltage ensures fast switching with reduced gate drive power. With a maximum power dissipation of 6 W and a forward voltage drop of 1.2 V, this MOSFET delivers robust performance in various electronic applications including power supplies, motor controls, and signal amplification.
Fully compliant with RoHS directive and JEDEC JS709A standards, it is also halogen-free according to IEC 61249-2-21, promoting environmentally friendly manufacturing practices. The compact dimensions of 5 mm length, 4 mm width, and 1.55 mm height further facilitate its integration into modern low-profile circuit boards.
This MOSFET offers excellent electrical performance with a maximum drain-source resistance of only 0.012 ohms. The device supports bidirectional gate-source voltage rating of -20 V to +20 V, enhancing design flexibility.
Its surface mount SOIC package simplifies PCB assembly and reduces board space usage. Commonly used in power management circuits, switching regulators, and electronic control units. Ideal for industrial, automotive, and consumer electronics requiring high current handling and efficient switching.
Vishay’s SI4840BDY-T1-GE3 MOSFET is a reliable and efficient solution for modern electronic needs, combining a low on-resistance TrenchFET design with a robust thermal and electrical profile for high-performance applications.
Explore more Vishay semiconductor products and related electronic components on EnvMart for your industrial and commercial requirements.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SI4840BDY-T1-GE3 is 19 A.
This model has a maximum drain-source voltage rating of 40 V.
The dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.55 mm in height.
The typical gate charge at a gate-source voltage of 3 V is 33 nC.
The maximum power dissipation for the SI4840BDY-T1-GE3 is 6 W.
The forward voltage drop is 1.2 V, which helps minimize conduction losses during operation.
The operating temperature range for this MOSFET is from -55°C to 150°C.
It uses an 8-pin SOIC surface mount package, facilitating easy PCB integration.
This device complies with RoHS, JEDEC JS709A, and is halogen-free according to IEC 61249-2-21.
The maximum gate-source voltage rating for this model is -20 V to +20 V.
This MOSFET features an N-channel configuration with enhancement mode operation.
The maximum drain-source resistance for this unit is 0.012 ohms, providing low on-resistance for efficient power control.
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