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Vishay P-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263 SUM110P06-08L-E3

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Vishay P-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263 SUM110P06-08L-E3

Name: Vishay P-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263 SUM110P06-08L-E3
Brand: Vishay
SKU: 218121
Price: 2.57 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	Taiwan
Brand	Vishay
Height	4.83mm
Length	10.41mm
Model	SUM110P06-08L-E3
Width	9.65mm
Mount Type	Surface
Series	SUM110P06-08L
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	110A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	8mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	3.75W
Typical Gate Charge Qg @ Vgs	160nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.5V

Key Features

Maximum continuous drain current of 110 A ensures robust high current handling.
60 V maximum drain-source voltage suitable for various power electronics circuits.
Low drain-source resistance of 8 milliohms reduces conduction losses.
Typical gate charge of 160 nC enables fast switching speeds.
Wide operating temperature range from -55°C to 175°C for reliability.
Compact dimensions with 10.41 mm length, 9.65 mm width, and 4.83 mm height.
Forward voltage rated at -1.5 V providing efficient conduction.
Designed for surface mount with TO-263 package for easy PCB integration.

Product Description

Vishay SUM110P06-08L-E3 is a P-Channel MOSFET transistor crafted for power management and switching tasks in electronic circuits. It combines high continuous current rating of 110 A with a drain-source voltage of 60 V in a compact TO-263 surface mount package featuring three pins for effective connectivity.

This enhancement mode MOSFET offers a low on-resistance of 8 milliohms which minimizes conduction losses and improves overall energy efficiency. The device’s typical gate charge of 160 nC at the specified gate-source voltage facilitates rapid switching capabilities, essential for applications requiring high-frequency operation.

Engineered for harsh environments, the MOSFET operates reliably between -55°C and 175°C, making it suitable for industrial and automotive applications where thermal endurance is critical. The forward voltage drop of -1.5 V further ensures efficient performance by reducing power loss during conduction phases.

The physical packaging dimensions are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height, compact for surface mounting on printed circuit boards, and supporting automated high-volume manufacturing.

This component is ideal for use in power electronics, motor drives, DC-DC converters, and other switching applications demanding high current and voltage capabilities. It supports a maximum power dissipation rating of 3.75 W, allowing stable operation under continuous load conditions.

High continuous drain current of 110 A for demanding power switching. Drain-source voltage of 60 V for versatility. Low Rds(on) of 8 milliohms reduces power losses. Fast switching with typical gate charge of 160 nC. Rating for wide operating temperature ensuring durability.

Compact TO-263 surface mount package for PCB integration. Forward voltage of -1.5 V enhances efficiency. Maximum power dissipation of 3.75 W.

Manufactured in Taiwan, Province Of China, this Vishay MOSFET meets robust quality standards and is recommended for industrial, automotive, and commercial power electronics applications. Explore additional electronic component options and semiconductor devices on EnvMart for optimized circuit designs and enhanced performance.

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Frequently Asked Questions

The maximum continuous drain current for this model is 110 A, allowing it to handle demanding power switching applications effectively.

This P-Channel MOSFET has a maximum drain-source voltage rating of 60 V, making it suitable for various power electronics circuits.

The typical gate charge for the Vishay SUM110P06-08L-E3 is 160 nC, enabling fast switching speeds essential for high-frequency operations.

The dimensions of the TO-263 package are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height, designed for surface mounting.

This model operates reliably within a temperature range of -55°C to 175°C, suitable for harsh environments.

The forward voltage drop of this MOSFET is rated at -1.5 V, which helps in reducing power loss during conduction.

The maximum power dissipation rating for this MOSFET is 3.75 W, allowing stable operation under continuous load conditions.

This model features a 3-pin configuration, facilitating effective connectivity in electronic circuits.

This device utilizes a P-channel type, designed for enhancement mode operation.

The maximum gate-source voltage rating for this MOSFET is -20 V to +20 V, providing flexibility in various applications.

This MOSFET is ideal for power electronics, motor drives, DC-DC converters, and other switching applications that require high current and voltage capabilities.

This model is manufactured in Taiwan, ensuring adherence to robust quality standards.