Vishay P-Channel MOSFET, 12 A Drain Current, 100 V Drain Source Voltage, Enhancement Mode, TO-220 Package IRF9530PBF

Vishay IRF9530PBF is a P-Channel MOSFET transistor designed for power and electronic component applications requiring reliable switching and control. It supports a maximum continuous drain current of 12 A and a maximum drain-source voltage of 100 V. Constructed in a TO-220 package with through-hole mounting, this enhancement mode MOSFET is well-suited for industrial, laboratory, and commercial electronics use cases requiring efficient power management.

This device features a maximum power dissipation of 88 W and a maximum drain-source resistance of 300 milliohms, ensuring low conduction losses and effective thermal management during operation. It can safely operate over a wide temperature range from -55°C up to 175°C, making it ideal for demanding or ambient temperature-variable environments.

The transistor has a maximum gate-source voltage rating of ±20 V and a typical gate charge of 38 nC, enabling fast switching capabilities crucial in power supply, motor control, and signal modulation applications. The compact physical dimensions (height 9.01 mm, width 4.7 mm, length 10.41 mm) facilitate easy integration into a variety of circuit designs.

As a Vishay semiconductor product, the IRF9530PBF meets stringent manufacturing standards and is widely used in power electronics assemblies, renewable energy converters, and other electronic systems requiring durable and efficient P-channel MOSFETs. It prioritizes robustness, cutting power losses, and thermal stability.

Designed as an enhancement mode P-channel MOSFET for power switching applications. Provides a maximum power dissipation of 88 W for robust operation. Features a maximum drain-source resistance of 300 milliohms to minimize losses.

Operates reliably between -55°C and 175°C, suitable for harsh environments. Incorporates a 3-pin configuration allowing easy through-hole mounting. Compact dimensions with a height of 9.01 mm, width of 4.7 mm, and length of 10.41 mm.

Maximum gate-source voltage rating of ±20 V for safe switching controls. Typical gate charge is 38 nC at specified gate voltage, optimizing switching speed.

For engineers and designers, the Vishay IRF9530PBF offers trusted performance for a wide range of applications including industrial automation, power supply regulation, HVAC controls, and electronics prototyping. Browse more Vishay semiconductors and MOSFET devices at EnvMart for comprehensive selection and technical support.