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Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC SI9933CDY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI9933CDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -50°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 58mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Transistor Configuration | Isolated |
Key Features
- This power MOSFET features enhancement mode operation providing efficient switching performance.
- Comes in a surface mount SOIC package suitable for compact PCB designs.
- Low maximum drain-source resistance of 58 mΩ enhances conduction efficiency.
- Maximum power dissipation of 2 W allowing reliable operation under thermal constraints.
- Supports a wide operating temperature range from -50°C to 150°C for demanding environments.
- Typical gate charge of 17 nC at gate-source voltage ensures fast switching.
- Maximum gate-source voltage of ±12 V safeguards against gate overvoltage.
- Dual P-channel transistor configuration ideal for complementary circuit design.
Product Description
Vishay SI9933CDY-T1-GE3 is a dual P-Channel Power MOSFET featuring Isolated TrenchFET 2 technology, designed to deliver high switching efficiency and low conduction losses in compact applications. Rated for 4 A maximum continuous drain current and 20 V drain-source voltage, this device supports enhancement mode functionality optimized for modern power control circuits.
Encapsulated in an 8-pin SOIC surface mount package, it offers ease of PCB mounting in industrial, automotive, and consumer electronic designs where robust power switching and thermal reliability are critical. The MOSFET exhibits a maximum drain-source resistance (Rds) of 58 milliohms, balancing power efficiency and heat dissipation with a maximum power dissipation of 2 Watts.
The device supports a broad temperature range, from -50°C to 150°C, making it suitable for harsh environmental conditions. Typical gate charge is 17 nanocoulombs at the threshold gate voltage, facilitating rapid switching transitions with minimal losses. The maximum gate-source voltage rating of ±12 V provides ruggedness against voltage spikes.
Physical dimensions of 5 mm (length), 4 mm (width), and 1.55 mm (height) enable compact board layouts without compromising performance. The isolated architecture and dual-element chip configuration cater to sophisticated power management applications including switching regulators, motor drivers, and integrated power modules.
Manufactured to high standards in China and distributed globally, the Vishay SI9933CDY-T1-GE3 supports diverse industrial sectors such as electronics manufacturing, automotive systems, and industrial control. This MOSFET's consistent quality enhances reliability in demanding usage scenarios.
Enhancement mode P-Channel MOSFET with isolated trench technology for high efficiency. Low on-resistance ensures minimal conduction losses and thermal stress. Compact SOIC package simplifies integration in surface mount technology assemblies.
Wide operating temperature range for reliable performance in extreme conditions. Robust gate voltage range and low gate charge for precise switching control. Ideal for power management, motor control, and switching regulator applications.
Explore Vishay Power MOSFET products at EnvMart for industrial-grade semiconductor components optimized for performance and durability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
This power MOSFET has a maximum drain-source voltage rating of 20 V.
The maximum power dissipation for this unit is 2 W.
The typical gate charge at gate-source voltage is 17 nC.
The maximum gate-source voltage rating is ±12 V.
The physical dimensions are 5 mm in length, 4 mm in width, and 1.55 mm in height.
The maximum drain-source resistance is 58 mΩ.
This model comes in an 8-pin SOIC surface mount package.
The operating temperature range is from -50°C to 150°C.
It features a dual P-channel transistor configuration.
This power MOSFET is designed for surface mounting.
This model belongs to the TrenchFET series.
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