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Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC SI9933CDY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI9933CDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -50°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 58mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Transistor Configuration | Isolated |
Key Features
- Features an 8-pin SOIC package for surface mounting applications.
- Offers a low maximum drain-source resistance of 58 mΩ for efficient conduction.
- Maximum power dissipation of 2 W supports moderate power handling.
- Operates reliably within a temperature range of -50°C to 150°C.
- Typical gate charge is 17 nC at specified gate-source voltage.
- Channel mode is enhancement type with transistor configuration as isolated.
- Compact physical dimensions with length 5 mm, width 4 mm, and height 1.55 mm.
- Contains 2 elements per chip, enabling dual transistor functionality.
Product Description
The Vishay SI9933CDY-T1-GE3 is a high-performance isolated TrenchFET power MOSFET featuring dual P-Channel transistors in a compact 8-pin SOIC package. Designed to provide reliable power management with a maximum continuous drain current of 4 A and maximum drain-source voltage of 20 V, this device is ideal for a variety of industrial and electronic applications requiring efficient switching and low conduction losses.
This enhancement mode MOSFET employs a TrenchFET structure to achieve a low Rds(on) of just 58 mΩ, optimizing power dissipation capped at 2 W for enhanced thermal management. It operates across a wide temperature range from -50°C up to 150°C, making it suitable for demanding environments.
Typical gate charge is 17 nC at the specified gate-source voltage limits (-12 V to +12 V), supporting fast switching characteristics. The transistor configuration is isolated, ensuring robustness and noise immunity in complex electronic circuits. The device physically measures 5 mm in length, 4 mm in width, and 1.55 mm in height, making it compatible with space-constrained designs.
Each device contains two elements per chip, effectively providing dual power MOSFETs in a single SOIC package, which is surface mount compatible. The product is manufactured in China and conforms to basic industry standards without automotive certifications.
This P-Channel power MOSFET is suitable for applications in power management, industrial controls, and electronic switching circuits where reliable low-voltage, medium-current performance is required.
8-pin SOIC package with surface mount compatibility enables efficient PCB integration. Enhanced electrical characteristics ensure optimal switching and low conduction losses. Wide operational temperature range supports diverse environmental conditions.
Dual MOSFET elements per chip offer compact and versatile functionality. Low gate charge facilitates high-speed switching for power electronics circuits. Explore more Vishay power semiconductor devices in the Power MOSFET category at EnvMart for your advanced industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
The maximum drain-source voltage is 20 V.
It comes in an 8-pin SOIC package, suitable for surface mounting applications.
The maximum power dissipation is 2 W.
It operates within a temperature range of -50°C to 150°C.
The typical gate charge is 17 nC at the specified gate-source voltage.
Each device contains 2 elements per chip, providing dual transistor functionality.
The maximum drain-source resistance is 58 mΩ.
This model features a P-Channel type channel.
The transistor configuration is isolated, ensuring robustness and noise immunity.
The dimensions are 5 mm in length, 4 mm in width, and 1.55 mm in height.
This power MOSFET is manufactured in China.
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