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Vishay Isolated TrenchFET 2 N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4214DDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 19.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 14.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- Dual N-Channel MOSFET in an 8-pin SOIC package offers compact surface mount design.
- Enhancement-mode transistor configuration suitable for low voltage applications.
- Maximum power dissipation rating of 2 W ensures reliable thermal performance.
- Low drain-source resistance of 19.5 mΩ improves conduction efficiency.
- Wide operating temperature range from -55°C to +150°C for versatile industrial use.
- Typical gate charge of 14.5 nC allows for swift switching with low gate drive requirements.
- Dual element per chip configuration enhances performance and reliability.
- Isolated transistor construction improves circuit design flexibility.
Product Description
Vishay SI4214DDY-T1-GE3 is an advanced isolated TrenchFET 2 N-Channel Power MOSFET designed for efficient power management in electronic devices requiring up to 7.5 A continuous drain current and 30 V maximum drain-source voltage. Packaged in an 8-pin SOIC surface mount type, this component enables compact and reliable integration in power circuits.
The enhancement mode transistor features low on resistance at 19.5 mΩ to minimize conduction losses, while its maximum power dissipation of 2 W supports effective thermal management under demanding conditions. The device operates reliably across a broad temperature range of -55°C to +150°C, making it suitable for industrial, automation, and consumer electronics applications requiring robust performance.
Designed by Vishay, this MOSFET supports fast switching with a typical gate charge of 14.5 nC, balancing gate drive requirements and switching speed for efficiency in power conversion circuits. Its isolated transistor configuration enhances safety and design flexibility in sensitive and compact systems.
With dual N-channel elements per chip, the MOSFET provides improved power handling and durability. Its package dimensions of 1.5 mm height, 5 mm length, and 4 mm width allow it to fit in space-constrained designs without compromising performance.
Manufactured in China and compliant with RoHS standards, the SI4214DDY-T1-GE3 is a dependable choice for power switching in industrial, automotive, telecommunications, and power supply equipment. It is optimized to enable energy-efficient and reliable operation within medium power electronics.
Dual N-Channel MOSFET in an 8-pin SOIC package for surface mount applications. Low drain-source resistance of 19.5 mΩ reduces conduction losses. Power dissipation rating of 2 W supports reliable thermal performance. Operates between -55°C and +150°C for industrial temperature ranges.
Typical gate charge of 14.5 nC facilitates fast switching. Isolated transistor design enhances design safety and flexibility. Compact dimensions: 1.5 mm height, 5 mm length, 4 mm width. Dual elements per chip provide higher reliability and performance.
Ideal for use in industrial, automotive, and power management systems. RoHS compliant and manufactured in China. Explore more Vishay semiconductor components in the Electronics & Electricals category on EnvMart for reliable industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.5 A.
It can handle a maximum drain-source voltage of 30 V.
The maximum power dissipation rating is 2 W, ensuring reliable thermal performance.
The typical gate charge is 14.5 nC, which allows for swift switching with low gate drive requirements.
The package dimensions are 1.5 mm in height, 5 mm in length, and 4 mm in width.
It operates reliably across a temperature range from -55°C to +150°C.
This MOSFET features dual elements per chip, enhancing performance and reliability.
It is designed for surface mount applications.
The drain-source resistance is 19.5 mΩ, which improves conduction efficiency.
This model is an N-channel MOSFET.
It features an isolated transistor configuration, which improves circuit design flexibility.
Yes, it is RoHS compliant, ensuring it meets environmental standards.
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