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Vishay TrenchFET N-Channel MOSFET, 10.9 A, 30 V Enhancement Mode, 8-Pin SOIC SI4128DY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4128DY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.03Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 3.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This enhancement-mode MOSFET enables efficient power switching operations.
- Device features low maximum drain-source resistance of 0.03 ohms for reduced conduction loss.
- Supports maximum power dissipation of 5 watts for reliable thermal performance.
- Operates over a temperature range from -55°C to +150°C for industrial applications.
- Typical gate charge is 3.8 nanocoulombs, ensuring fast switching speed.
- Maximum gate-source voltage tolerance is ±20 volts for robust gate control.
- Compact package of dimensions 5 mm length, 4 mm width, and 1.5 mm height allows surface mount design.
- Conforms to IEC 61249-2-21 standards for semiconductor materials and packaging.
Product Description
The Vishay SI4128DY-T1-GE3 is a TrenchFET N-Channel enhancement mode MOSFET designed for power management in electronic circuits requiring continuous drain current up to 10.9 A and maximum drain-source voltage of 30 V. This device comes in an 8-pin SOIC surface-mount package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height, enabling space-efficient PCB layout designs.
Featuring a low maximum drain-source resistance of 0.03 ohms, the SI4128DY-T1-GE3 reduces conduction losses, which improves overall efficiency in power switching applications. The MOSFET supports a maximum power dissipation of 5 watts, suitable for demanding industrial, automotive, and consumer electronics environments.
This component operates reliably across a broad temperature range from -55°C up to 150°C, making it ideal for harsh conditions and extended temperature cycles. The gate charge of 3.8 nanocoulombs at typical gate-source voltages allows fast switching, reducing switching losses in high-speed applications.
The device tolerates gate-source voltages of -20 to +20 volts, increasing the robustness of the gate drive circuitry. Compliance with IEC 61249-2-21 semiconductor standards ensures quality and reliability. This MOSFET is applicable in power management for industrial automation, consumer electronics, motor control, and power supply circuits.
This enhancement-mode MOSFET device suits industrial, laboratory, and commercial power electronics requiring robust N-Channel switching. Compact SOIC package facilitates integration in dense electronic assemblies. High current rating and low resistance maximize power efficiency and thermal performance.
Broad operating temperature range enables deployment in challenging environments. Compliance with industry standards guarantees reliability and quality assurance. Explore Vishay's full range of discrete semiconductor components at EnvMart for diverse power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.9 A.
It has a maximum drain-source voltage rating of 30 V.
The typical gate charge at gate-source voltages is 3.8 nanocoulombs.
The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
This MOSFET supports a maximum power dissipation of 5 watts.
It operates over a temperature range from -55°C to +150°C.
The maximum gate-source voltage tolerance is ±20 volts.
The maximum drain-source resistance is 0.03 ohms.
It conforms to IEC 61249-2-21 standards for semiconductor materials and packaging.
This model is designed for surface mounting.
This MOSFET is applicable in power management for industrial automation, consumer electronics, motor control, and power supply circuits.
The SOIC package has 8 pins.
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