Vishay N-Channel MOSFET 14 A 60 V Enhancement 3-Pin TO-220 IRFI IRFIZ24GPBF

Vishay IRFIZ24GPBF is a high-performance N-Channel MOSFET transistor designed for electronic and power applications where efficient switching is critical. Packaged in a durable TO-220 form factor with a 3-pin through-hole mount, this device supports continuous drain currents up to 14 amperes at a drain to source voltage of 60 volts, making it suitable for a wide range of industrial, automotive, and commercial applications.

The transistor features an enhancement mode channel and a maximum power dissipation rating of 37 watts, allowing it to handle substantial power loads while maintaining thermal stability. With a typical gate charge of 25 nanocoulombs and maximum gate-source voltage ratings of -20 to +20 volts, it facilitates rapid switching operations with controlled gate drive requirements.

Designed to operate reliably across a wide temperature range from -55°C to 175°C, the IRFIZ24GPBF ensures high durability in harsh environmental conditions. Its low maximum drain source resistance of 100 milliohms contributes to minimal power losses during conduction, enhancing overall system efficiency.

Maximum continuous drain current up to 14 amperes. Drain to source voltage rated at 60 volts. Maximum power dissipation of 37 watts. Low maximum drain source resistance of 100 milliohms. Typical gate charge of 25 nanocoulombs at Vgs.

Operating temperature range from -55°C to 175°C. Package type: TO-220 with through hole mounting. Three pins for easy circuit integration. Forward voltage of 1.5 volts for efficient conduction. Manufactured in China ensuring quality standards.

This MOSFET is commonly used in power management, motor control, switching regulators, and industrial electronic applications requiring robust and reliable semiconductor performance.

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