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DiodesZetex N-Channel MOSFET, 2.4 A Continuous Drain Current, 20 V Drain Source Voltage, SOT-23 Package ZXMN2B01FTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.12mm |
| Length | 3.04mm |
| Model | ZXMN2B01FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 4.8nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 730mV |
Key Features
- Supports a maximum continuous drain current of 2.4 amperes.
- Maximum drain-source voltage rating of 20 volts.
- Equipped with a low drain-source resistance of 200 milliohms.
- Enhancement mode channel with N-type channel design.
- Compact SOT-23 surface mount package with 3 pins.
- Wide operating temperature range from -55°C to 150°C.
- Maximum power dissipation rating of 806 milliwatts.
- Maximum gate-source voltage of -8 to +8 volts for robust operation.
Product Description
DiodesZetex ZXMN2B01FTA is a high-performance N-Channel MOSFET designed for electronic applications requiring efficient switching and amplification. Rated for a continuous drain current of 2.4 A and a maximum drain-source voltage of 20 V, this enhancement mode MOSFET features a low on-resistance of 200 mΩ, making it suitable for low power switching circuits.
The device comes in a compact 3-pin SOT-23 surface mount package, facilitating easy PCB assembly in modern electronics manufacturing. It operates reliably in harsh environmental conditions, with an operating temperature range of -55°C to 150°C and a maximum power dissipation of 806 mW.
With a typical gate charge of 4.8 nC at Vgs, the ZXMN2B01FTA allows rapid switching speeds essential for pulse-width modulation and switching power supplies. It can withstand a maximum gate-source voltage of -8 to +8 volts, ensuring robustness against voltage spikes.
This MOSFET is ideal for applications in industrial electronics, power management, automotive systems where high switching efficiency and thermal stability are critical. Its small form factor with dimensions of length 3.04 mm, width 1.4 mm, and height 1.12 mm enables compact and lightweight design integration.
Supports a maximum continuous drain current of 2.4 amperes. Maximum drain-source voltage rating of 20 volts. Equipped with a low drain-source resistance of 200 milliohms. Enhancement mode channel with N-type channel design.
Compact SOT-23 surface mount package with 3 pins. Wide operating temperature range from -55°C to 150°C. Maximum power dissipation rating of 806 milliwatts. Maximum gate-source voltage of -8 to +8 volts for robust operation.
Forward voltage approximately 730 millivolts ensuring efficient switching. Small form factor with dimensions: length 3.04 mm, width 1.4 mm, height 1.12 mm.
This product is an essential component for designers and engineers creating power-sensitive circuits in commercial, industrial, and automotive electronics. Explore related MOSFET products to find alternatives or complementary devices for enhanced power control solutions.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 2.4 amperes.
The maximum drain-source voltage rating is 20 volts.
It features a low drain-source resistance of 200 milliohms.
This MOSFET comes in a compact SOT-23 surface mount package with 3 pins.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation rating is 806 milliwatts.
The typical gate charge at Vgs is 4.8 nanocoulombs.
It can withstand a maximum gate-source voltage of -8 to +8 volts.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.12 mm in height.
This model features an enhancement mode N-channel design.
The forward voltage is approximately 730 millivolts.
It is ideal for applications in industrial electronics, power management, and automotive systems.
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