DiodesZetex N-Channel Enhancement Mode MOSFET, 60 V, 4.4 A, 4-Pin SOT-223 ZXMN6A11GTA

DiodesZetex ZXMN6A11GTA is a high-quality N-Channel Enhancement Mode MOSFET designed for use in electronic, industrial, and automotive applications. It supports a maximum continuous drain current of 4.4 A and withstands a maximum drain-source voltage of 60 V, making it suitable for switching and amplification tasks within these electrical limits. Packaged in a compact surface mount 4-pin SOT-223 case, this device allows efficient assembly on PCBs.

Its low drain-source resistance (Rds) of 180 milliohms reduces power losses during conduction, while the typical gate charge of 5.7 nanocoulombs enables fast switching speeds for improved efficiency in switching regulators and power management circuits. The MOSFET operates reliably over a broad temperature range from -55°C to 150°C, ensuring performance stability under demanding environmental conditions.

Moreover, the ZXMN6A11GTA is compliant with AEC-Q100 automotive standards, qualifying it for demanding automotive electronics and embedded systems. The device has a typical forward voltage drop of 950 mV and a maximum power dissipation rating of 3.9 W, suitable for moderate power dissipation scenarios.

Applications include power conversion, motor controls, battery management, and load switching in industrial automation, automotive electronics, consumer appliances, and other embedded systems. The compact SOT-223 package with dimensions 6.7 x 3.7 x 1.8 mm aids in space-efficient circuit designs.

Features an enhancement channel type designed for efficient switching applications. Maximum continuous drain current of 4.4 A suitable for moderate power loads. Maximum drain-source voltage of 60 V for reliable operation within this voltage range.

Low on-resistance of 180 milliohms to minimize conduction losses. Typical forward gate charge of 5.7 nC ensures fast switching performance. Wide operating temperature range from -55°C up to 150°C for harsh environments. Compliant with automotive grade standard AEC-Q100 for quality assurance.

Compact SOT-223 package measuring 6.7 mm length, 3.7 mm width, and 1.8 mm height. Maximum power dissipation of 3.9 W to handle thermal constraints effectively. Forward voltage drop approximately 950 mV for efficient conduction.

This diode is ideal for various industrial and automotive uses, including power management circuits, switching power supplies, and embedded system power regulation. Explore more DiodesZetex semiconductor products and detailed datasheets on EnvMart for your component sourcing needs.

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