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DiodesZetex P-Channel MOSFET 4.3 A, 60 V Enhancement, 4-Pin SOT-223 ZXMP6A17GTA

Category MOSFETs Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.8mm
Length 6.7mm
Model ZXMP6A17GTA
Width 3.7mm
Mount Type Surface
Series ZXMP6A17G
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q104, AEC-Q100
Channel Type Type P
Maximum Continuous Drain Current Id 4.3A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 190mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.9W
Typical Gate Charge Qg @ Vgs 17.7nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.95V

Key Features

  • Type P-channel MOSFET for power applications.
  • Surface mount package suitable for compact electronic designs.
  • Maximum drain-source voltage of 60 V ensures reliable operation.
  • Low drain-source resistance of 190 milliohms for efficient conduction.
  • Typical gate charge of 17.7 nC at Vgs enhances switching performance.
  • Supports operating temperatures from -55°C to 150°C for durability.
  • Maximum power dissipation rated at 3.9 W for robust usage.
  • Certified to automotive standards AEC-Q200, AEC-Q101, AEC-Q104, and AEC-Q100.

Product Description

DiodesZetex ZXMP6A17GTA is a P-Channel Enhancement MOSFET designed for efficient electrical switching and amplification in electronic circuits. It supports a maximum continuous drain current of 4.3 A and a maximum drain-source voltage of 60 V, making it suitable for industrial, automotive, and power management applications.

The device features a surface mount SOT-223 package with 4 pins, enabling compact and reliable PCB integration. Its low drain-source resistance at 190 milliohms reduces conduction losses, enhancing energy efficiency in circuits.

This MOSFET operates effectively over a wide temperature range from -55°C up to 150°C, ensuring performance stability in harsh environments. Its typical gate charge of 17.7 nC optimizes switching speed and power consumption.

The product conforms to important automotive standards including AEC-Q200, AEC-Q101, AEC-Q104, and AEC-Q100, underscoring its suitability for automotive electronic systems. Type P-channel MOSFET for power switching applications.

Surface mount SOT-223 4-pin package for easy PCB assembly. Maximum continuous drain current of 4.3 A at 60 V drain-source voltage. Low on-resistance of 190 milliohms for efficient conductivity. Wide operating temperature range from -55°C to 150°C for reliability.

Maximum power dissipation of 3.9 W supports moderate power loads. Typical gate charge of 17.7 nC enhances switching efficiency. Compliant with automotive quality standards AEC-Q200, Q101, Q104, and Q100.

This MOSFET is ideal for industrial automation, power management circuits, and automotive electronic systems. Its reliable specifications ensure stable performance across various demanding applications.

Explore a wide range of semiconductor components and discrete MOSFETs on EnvMart for your electronics manufacturing and design needs.

DiodesZetex P-Channel MOSFET 4.3 A, 60 V Enhancement, 4-Pin SOT-223 ZXMP6A17GTA
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