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Nexperia N-Channel MOSFET, 53 A Continuous Current, 60 V Drain Source Voltage, Enhancement Mode, 4-Pin LFPAK BUK7M12-60EX

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 900μm
Length 3.4mm
Model BUK7M12-60EX
Width 2.6mm
Mount Type Surface
Series BUK7M1260E
Maximum Operating Temperature 175°C
Package Type LFPAK
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 53A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 27mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 75W
Typical Gate Charge Qg @ Vgs 24.8nC
Maximum Gate Source Voltage Vgs 20V

Key Features

  • High power dissipation rating of 75 W enables thermally demanding applications.
  • Standard level MOSFET with enhancement channel mode for stable operation.
  • Compact 4-pin LFPAK33 package suitable for surface mounting.
  • Qualified to AEC-Q101 automotive standard ensuring reliability under harsh environments.
  • Typical gate charge of 24.8 nC supports fast switching speeds.
  • Wide operating temperature range from -55°C to 175°C for automotive grade use.
  • Low on-resistance of 27 mΩ reduces conduction losses in power circuits.
  • Maximum gate-source voltage of 20 V allows robust gate drive margins.

Product Description

Nexperia BUK7M12-60EX is an N-Channel MOSFET semiconductor device optimized for automotive and industrial power applications. The MOSFET features a maximum continuous drain current of 53 A and a maximum drain-source voltage of 60 V. Its enhancement mode channel ensures high efficiency switching in a compact 4-pin LFPAK33 surface mount package.

This power MOSFET utilizes TrenchMOS technology for superior electrical performance and is qualified under the AEC-Q101 automotive standard to meet rigorous quality and reliability requirements. The device supports a maximum operating temperature of 175°C making it suitable for thermally demanding environments commonly found in automotive and industrial use cases.

The low on-resistance of 27 mΩ and typical gate charge of 24.8 nC enable efficient power switching in high-performance motor control, lamp, and solenoid applications within 12 V automotive systems. A maximum gate-source voltage of 20 V provides a healthy margin for drive signals ensuring robustness and reliability.

This MOSFET is repetitive avalanche rated and designed to handle demanding transient load conditions often seen in automotive transmissions and other control units. Its compact LFPAK form factor allows for high density PCB layouts and effective heat dissipation.

High power dissipation of 75 W supports robust operation in harsh conditions. Wide temperature range from -55°C to 175°C for extended durability. Qualified to automotive industry standard AEC-Q101. Low Rds(on) ensures efficient conduction losses reduction.

Designed for automotive motor control and power switching systems.

Applications include automotive electronics, power management modules, HVAC control systems, and industrial motor drivers. The product supports engineers in designing reliable, high efficiency circuits with compact form factors.

Nexperia N-Channel MOSFET, 53 A Continuous Current, 60 V Drain Source Voltage, Enhancement Mode, 4-Pin LFPAK BUK7M12-60EX
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Frequently Asked Questions

The maximum continuous drain current for the BUK7M12-60EX is 53 A.

The maximum drain-source voltage is 60 V.

It has a high power dissipation rating of 75 W, making it suitable for thermally demanding applications.

The typical gate charge for the BUK7M12-60EX is 24.8 nC, which supports fast switching speeds.

This model operates within a wide temperature range from -55°C to 175°C.

The on-resistance of the BUK7M12-60EX is 27 mΩ, which helps reduce conduction losses in power circuits.

It comes in a compact 4-pin LFPAK33 surface mount package.

Yes, it is qualified to the AEC-Q101 automotive standard, ensuring reliability under harsh environments.

The maximum gate-source voltage is 20 V, providing a robust margin for gate drive signals.

This MOSFET is designed for automotive motor control, power management modules, and industrial motor drivers.

The dimensions are 3.4 mm in length, 2.6 mm in width, and 900 μm in height.

It utilizes an enhancement mode channel for stable operation and efficient switching.

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