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Nexperia N-Channel MOSFET LFPAK Surface Mount 43 A 60 V Enhancement Mode BUK7M15-60EX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 900μm |
| Length | 3.4mm |
| Model | BUK7M15-60EX |
| Width | 2.6mm |
| Mount Type | Surface |
| Series | BUK7M1560E |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 43A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 34mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62W |
| Typical Gate Charge Qg @ Vgs | 19.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The device supports enhancement mode operation suitable for power switching applications.
- Surface mount LFPAK package offers easy integration into compact PCB layouts.
- Maximum power dissipation rating of 62 W ensures effective thermal handling.
- Designed to operate reliably over a temperature range from -55°C to 175°C.
- Gate threshold voltage and gate charge optimized for efficient switching performance.
- Compliant with AEC-Q101 standard for automotive-grade applications.
- 4-pin configuration supports robust electrical connectivity.
- Ideal for automotive systems, motor control, lamp and solenoid switching.
Product Description
Nexperia BUK7M15-60EX N-channel MOSFET in an LFPAK surface mount package is engineered for high performance power switching with a continuous drain current rating of 43 A and voltage rating of 60 V. It operates in enhancement mode and features trench MOS technology optimized for automotive applications.
This device is compliant with the automotive AEC-Q101 standard, ensuring robust reliability for use in high-demand environments such as automotive motor control, transmission control, and power systems operating at 12 V automotive battery voltages.
The compact LFPAK package measures 3.4 mm in length, 2.6 mm in width, and 0.9 mm in height, allowing integration in space-constrained PCBs. The MOSFET integrates a low on-resistance of 34 milliohms for high conduction efficiency and a gate charge of 19.4 nC to enable fast switching performance with minimal losses.
Operating temperature range from -55°C to 175°C makes the MOSFET suitable for challenging thermal environments. Its maximum power dissipation is 62 W, enabling reliable operation under significant load conditions.
High continuous drain current of 43 A. Drain-source voltage rating of 60 V. Surface mount LFPAK package for compact footprint. Low Rds(on) of 34 milliohms. AEC-Q101 automotive compliant for enhanced reliability. Wide operational temperature range (-55°C to 175°C).
4-pin configuration supporting efficient connections. Suitable for automotive and power switching applications.
This MOSFET is ideally used in industrial, automotive, and power management systems, including motor drives, lamp control, solenoids, and transmission control modules. Its robustness and performance characteristics make it suitable for manufacturing, laboratory, and commercial electronics applications requiring reliable high current switching.
Explore more Nexperia MOSFETs and power semiconductors on EnvMart for your design and production needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 43 A.
The drain-source voltage rating of the BUK7M15-60EX is 60 V.
This model comes in an LFPAK surface mount package.
The operating temperature range for the BUK7M15-60EX is from -55°C to 175°C.
The maximum power dissipation rating for this model is 62 W.
The typical gate charge for this model is 19.4 nC at Vgs.
This model features a 4-pin configuration.
The maximum drain-source resistance (Rds(on)) for this model is 34 milliohms.
Yes, it is compliant with the AEC-Q101 standard for automotive applications.
This MOSFET is suitable for automotive systems, motor control, lamp control, and solenoid switching.
The maximum gate-source voltage (Vgs) for this model is 20 V.
This model utilizes trench MOS technology optimized for automotive applications.
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