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Vishay N-Channel Enhancement MOSFET, 2.7 A, 150 V, 8-Pin SOIC SI4848DY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI4848DY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4848DY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.7A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device features a low maximum drain-source resistance of 95 milliohms for efficient conduction.
- Maximum power dissipation is rated at 3 watts, suitable for medium power applications.
- It has a typical gate charge of 17 nanocoulombs at the gate-source voltage, enabling fast switching.
- Designed with an enhancement channel mode and supports operating temperatures ranging from -55°C to 150°C.
- The compact surface mount SOIC package measures 5 mm length, 4 mm width, and 1.55 mm height.
- Maximum gate-source voltage is 20 V with a forward voltage of 1.2 V.
- The product is halogen-free and manufactured using TrenchFET® technology.
- Ideal for use in electronic circuits requiring efficient switching, power management, and amplification.
Product Description
Vishay SI4848DY-T1-GE3 is a high-performance N-Channel Enhancement MOSFET designed for efficient power switching and amplification applications. It supports a maximum continuous drain current of 2.7 A and can withstand a maximum drain-source voltage of 150 V, making it suitable for various industrial, electronic, and power management uses.
This MOSFET is housed in an 8-Pin SOIC surface mount package offering a compact footprint with dimensions measuring 5 mm in length, 4 mm in width, and 1.55 mm in height. Its low maximum drain-source resistance of 95 milliohms allows for diminished power losses and improved efficiency in switching circuits.
Featuring TrenchFET® technology, this device operates reliably within a broad temperature range from -55°C up to 150°C, ensuring durability in challenging operating environments. The MOSFET includes a typical gate charge of 17 nanocoulombs at gate-source voltage, enabling fast switching speeds critical in modern electronics.
With a maximum power dissipation rating of 3 watts and a maximum gate-source voltage of 20 volts, it is well-adapted for medium power circuits and applications requiring precise control.
Halogen-free and RoHS compliant, this device meets environmental safety standards and is suitable for integration into green electronics. The device provides an economical and reliable solution for power switching in industrial, laboratory, and commercial electronic designs.
Its robust specifications make it ideal for use in power amplifiers, switching regulators, and motor controllers. Supports enhanced switching efficiency and thermal stability. Compact SOIC package facilitates easy PCB mounting and space-saving designs.
Ensures reduced electromagnetic interference and noise due to optimized gate charge and resistance.
The product is manufactured in China and supplied as new, ensuring original factory quality and authenticity. For additional design resources, users can refer to technical datasheets, evaluation kits, and available PCB footprints and 3D models.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay SI4848DY-T1-GE3 is 2.7 A.
This model can withstand a maximum drain-source voltage of 150 V.
The SOIC package measures 5 mm in length, 4 mm in width, and 1.55 mm in height.
The maximum power dissipation is rated at 3 watts.
The typical gate charge at gate-source voltage is 17 nanocoulombs.
The maximum gate-source voltage for this model is 20 V.
It operates within a temperature range from -55°C to 150°C.
The maximum drain-source resistance is 95 milliohms.
This device features an N-channel enhancement mode.
Yes, the Vishay SI4848DY-T1-GE3 is halogen-free and RoHS compliant.
It is suitable for power switching, amplification, and various medium power applications.
The country of origin for this MOSFET is China.
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