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Nexperia N-Channel MOSFET, 4.1 A Continuous Drain Current, 80 V Drain-Source Voltage, Enhancement Mode, 8-Pin DFN PMPB95ENEAX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 650μm |
| Length | 2.1mm |
| Model | PMPB95ENEAX |
| Width | 2.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.1A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 202mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 15.6W |
| Typical Gate Charge Qg @ Vgs | 9.9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Small and leadless ultra thin SMD plastic package | 2 x 2 x 0.65 mm |
Key Features
- Trench MOSFET technology enables high performance and low on-resistance.
- Small leadless ultra-thin SMD plastic package measuring 2.1 x 2.1 x 0.65 mm.
- Exposed drain pad offers excellent thermal conduction for heat dissipation.
- Tin-plated solderable side pads allow easy optical solder inspection and solderability.
- Automotive-grade AEC-Q101 qualified for robust reliability in automotive applications.
- Maximum drain-source resistance of 202 milliohms ensures efficient conduction.
- Typical gate charge of 9.9 nC at maximum gate source voltage enhances switching speed.
- Wide operating temperature range from -55°C to 150°C for versatile usage.
Product Description
Nexperia PMPB95ENEAX is a high-performance single N-channel enhancement mode MOSFET designed for medium power applications. It supports a continuous drain current of 4.1 A and a maximum drain-source voltage of 80 V. Packaged in a compact, leadless 8-pin DFN (2.1 x 2.1 x 0.65 mm) surface-mount device, it utilizes trench MOSFET technology to achieve low on-resistance and efficient switching characteristics.
The device features an exposed drain pad that enhances thermal conduction ensuring effective heat dissipation during operation. Tin-plated solderable side pads facilitate visual soldering inspection and excellent solderability, supporting reliable PCB manufacturing. The MOSFET holds AEC-Q101 automotive qualification, making it suitable for automotive and industrial electronics applications requiring high reliability.
Its electrical ratings include maximum drain-source resistance of 202 milliohms and a typical gate charge of 9.9 nC at the maximum gate-source voltage of 20 V, enabling fast switching and energy efficiency. The device operates safely within a wide temperature range from -55°C to 150°C, suitable for harsh environments. Maximum power dissipation is rated at 15.6 W, aligning well with medium power electronic circuits.
Common industrial use cases include power management in automotive electronics, consumer devices, and industrial control systems requiring reliable MOSFET performance in space-constrained layouts. Its surface mount package and compact size enable high-density PCB implementations.
Trench MOSFET technology delivers low on-resistance and high efficiency. Compact 2.1 x 2.1 x 0.65 mm 8-pin DFN package designed for surface mounting. Exposed drain pad maximizes thermal conduction and heat dissipation. Compatible with automotive industry standards, AEC-Q101 qualified.
Wide operating temperature range from -55°C to 150°C ensures versatility. Power dissipation up to 15.6 W for medium power applications. Tin-plated solder side pads enable easy soldering inspection. Typical gate charge of 9.9 nC supports rapid switching efficiency.
Maximum drain-source resistance of 202 mΩ enhances conductivity. Reliable MOSFET choice for industrial, automotive, and consumer electronics. Explore more Nexperia semiconductor components and MOSFETs to enhance your electronic design and manufacturing projects at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 4.1 A.
This MOSFET supports a maximum drain-source voltage of 80 V.
It is packaged in a leadless 8-pin DFN with dimensions of 2.1 mm x 2.1 mm x 0.65 mm.
The maximum power dissipation for this model is rated at 15.6 W.
The typical gate charge at the maximum gate-source voltage of 20 V is 9.9 nC.
The maximum drain-source resistance is 202 milliohms, which enhances conductivity.
It operates within a wide temperature range from -55°C to 150°C.
Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
This model supports surface mounting.
It is an N-channel enhancement mode MOSFET.
It utilizes trench MOSFET technology for high performance and low on-resistance.
The exposed drain pad enhances thermal conduction for effective heat dissipation during operation.
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