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DiodesZetex Dual DMP 2 Type P-Channel MOSFET 5.2A 60V Enhancement SOIC 8-Pin DMPH6050SSD-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.5mm
Length 4.95mm
Model DMPH6050SSD-13
Width 3.95mm
Mount Type Surface
Series DMP
Maximum Operating Temperature 175°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 5.2A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 60mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 0.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -0.7V
Transistor Configuration Dual

Key Features

  • This MOSFET features dual transistor configuration enhancing circuit efficiency.
  • It operates in enhancement mode with a maximum gate-source voltage of 20V.
  • The device has a low drain-source resistance of 60 milliohms for reduced power loss.
  • Typical gate charge at Vgs is only 0.5nC, ensuring fast switching.
  • Designed to operate reliably within -55°C to 175°C temperature range.
  • Compact footprint with dimensions 4.95mm length, 3.95mm width, and 1.5mm height.
  • It complies with automotive standard AEC-Q101, ensuring high reliability in automotive electronics.

Product Description

DiodesZetex DMPH6050SSD-13 is a Dual P-Channel MOSFET designed for applications demanding efficient switching and power management. Rated for a maximum continuous drain current of 5.2A and drain-source voltage up to 60V, it offers robust performance in a compact 8-pin SOIC surface mount package.

This enhancement-mode transistor operates with a low gate charge of 0.5nC at typical gate-source voltage, enabling fast switching speeds and minimized energy loss. The maximum drain-source resistance of 60 milliohms reduces conduction losses, improving overall circuit efficiency.

Engineered to withstand harsh operating environments, this MOSFET supports temperatures from -55°C to 175°C and meets stringent automotive grade AEC-Q101 standards, making it suitable for automotive and industrial applications.

Its dual transistor configuration allows for versatile circuit designs, particularly in power management and amplification stages where dual channels improve system flexibility and performance.

This MOSFET features dual transistor configuration enhancing circuit efficiency. It operates in enhancement mode with a maximum gate-source voltage of 20V. The device has a low drain-source resistance of 60 milliohms for reduced power loss.

Typical gate charge at Vgs is only 0.5nC, ensuring fast switching. Designed to operate reliably within -55°C to 175°C temperature range. Compact footprint with dimensions 4.95mm length, 3.95mm width, and 1.5mm height. It complies with automotive standard AEC-Q101, ensuring high reliability in automotive electronics.

This product is widely used in electronic components, power connectors, semiconductor discrete devices, and advanced automotive power systems. It is ideal for applications requiring high switching speeds, low power dissipation, and reliable operation across a wide temperature range.

Explore more MOSFETs, semiconductor devices, and discrete semiconductors at EnvMart to meet your industrial, commercial, and automotive electronic needs.

DiodesZetex Dual DMP 2 Type P-Channel MOSFET 5.2A 60V Enhancement SOIC 8-Pin DMPH6050SSD-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.2A.

It can handle a maximum drain-source voltage of 60V.

The typical gate charge at Vgs is 0.5nC, ensuring fast switching speeds.

This model has dimensions of 4.95mm in length, 3.95mm in width, and 1.5mm in height.

The maximum gate-source voltage is 20V.

It is designed to operate reliably within a temperature range of -55°C to 175°C.

The maximum drain-source resistance is 60 milliohms, which helps reduce power loss.

This MOSFET complies with the automotive standard AEC-Q101, ensuring high reliability in automotive applications.

It features a dual transistor configuration, enhancing circuit efficiency.

The maximum power dissipation is rated at 1.5W.

This device is designed for surface mounting.

This model has 8 pins.

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