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onsemi PowerTrench N-Channel MOSFET, 57 A, 100 V Enhancement Mode, 8-Pin PQFN FDMC86184
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 750μm |
| Length | 3.4mm |
| Model | FDMC86184 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 57A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 54W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- High maximum continuous drain current of 57 amperes for robust power handling.
- Drain-source voltage rating of 100 volts suitable for various power applications.
- Low on-resistance (Rds) of 8.5 milliohms ensures efficient conduction.
- Surface mount PQFN package with 8 pins facilitates compact PCB designs.
- Maximum power dissipation of 54 watts supports high thermal load.
- Typical gate charge of 21 nanocoulombs reduces switching losses.
- Wide operating temperature range from -55°C to 150°C for reliable performance.
- Maximum gate-source voltage of ±20 volts offers gate protection.
Product Description
onsemi FDMC86184 PowerTrench N-Channel MOSFET is a high-performance semiconductor device designed for efficient power switching applications. Featuring a continuous drain current rating of 57 A and a maximum drain-source voltage of 100 V, this enhancement mode MOSFET is built in an 8-pin PQFN surface-mount package optimized for compact electronic designs.
The device offers low on-resistance (8.5 milliohms), which minimizes conduction losses and enhances overall system efficiency. Typical gate charge of 21 nC reduces switching time and losses, making FDMC86184 suitable for high-frequency switching circuits.
It supports a broad operating temperature range from -55°C to 150°C, ensuring durability and stable operation in demanding environments including industrial, automotive, and power management systems. The maximum power dissipation of 54 W enables handling of substantial power loads, while the nominal forward voltage of 1.2 V contributes to minimized voltage drop during conduction.
The compact package dimensions of 3.4 mm by 3.4 mm by 0.75 mm height facilitate integration in space-constrained applications such as power regulators, motor drives, and DC-DC converters. The maximum gate-source voltage of ±20 V protects the device gate terminals against voltage spikes, enhancing robustness.
High continuous drain current rating of 57 A. 100 V maximum drain-source voltage supports versatile power applications. Low drain-source resistance of 8.5 mΩ reduces conduction loss. 8-pin PQFN surface mount package for compact electronic designs.
Wide temperature operation from -55°C to 150°C ensures reliability. 54 W maximum power dissipation for demanding thermal conditions. Low gate charge of 21 nC accelerates switching performance. Forward voltage drop of 1.2 V optimizes efficiency.
Compact dimensions enable use in compact and portable devices. Enhancement mode channel for precise power control.
This MOSFET is ideal for industrial power control, automotive electronics, power supplies, inverter circuits, and various semiconductor applications requiring reliable switching and low losses. onsemi PowerTrench technology guarantees high efficiency and dependable performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 57 A, allowing it to handle robust power applications effectively.
The FDMC86184 has a maximum drain-source voltage rating of 100 V, making it suitable for various power applications.
This model features a low on-resistance of 8.5 milliohms, which helps to minimize conduction losses and improve efficiency.
The PQFN package dimensions are 3.4 mm in length and width, with a height of 750 μm, facilitating compact PCB designs.
The typical gate charge for this model is 21 nanocoulombs, which helps reduce switching losses in applications.
The maximum power dissipation for the FDMC86184 is 54 watts, supporting high thermal load applications.
This model operates reliably within a temperature range from -55°C to 150°C, suitable for demanding environments.
The maximum gate-source voltage for the FDMC86184 is ±20 volts, providing gate protection against voltage spikes.
This model uses an enhancement mode N-channel, which allows for precise power control in various applications.
The FDMC86184 is suitable for industrial power control, automotive electronics, power supplies, inverter circuits, and other semiconductor applications requiring reliable switching.
The forward voltage drop for the FDMC86184 is 1.2 V, which helps optimize efficiency during conduction.
This model features an 8-pin configuration, designed for surface mount applications.
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