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Toshiba Isolated Dual P-Channel MOSFET, 330 mA, 20 V, 6-Pin UF6 Package SSM6P36TU(TE85L,F)

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Toshiba Isolated Dual P-Channel MOSFET, 330 mA, 20 V, 6-Pin UF6 Package SSM6P36TU(TE85L,F)

Name: Toshiba Isolated Dual P-Channel MOSFET, 330 mA, 20 V, 6-Pin UF6 Package SSM6P36TU(TE85L,F)
Brand: Toshiba
SKU: 213346
Price: 0.52 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	0.7mm
Length	1.25mm
Model	SSM6P36TU(TE85L,F)
Width	1.7mm
Mount Type	Surface
Series	SSM6
Maximum Operating Temperature	150°C
Package Type	UF6
Minimum Operating Temperature	-55°C
Pin Count	6
Number of Elements per Chip	2
Channel Type	Type P
Maximum Continuous Drain Current Id	330mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	3.6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	1.2nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	0.88V
Transistor Configuration	Isolated

Key Features

Features isolated dual P-channel MOSFET transistor configuration.
Maximum drain-source voltage rating of 20 volts.
Low maximum drain-source resistance of 3.6 ohms ensures efficient switching.
Supports an enhancement channel mode for precise control.
Maximum power dissipation of 500 milliwatts for moderate power handling.
Typical gate charge of 1.2 nanocoulombs at Vgs, suitable for fast switching.
Operates reliably within temperature ranges from -55°C to 150°C.
Designed for surface mount applications with 6 pins in UF6 package.

Product Description

The Toshiba SSM6P36TU(TE85L,F) is an isolated dual P-Channel MOSFET transistor designed primarily for surface mount applications demanding efficient switching and reliable performance. Enclosed in a compact 6-Pin UF6 package, this device supports a maximum continuous drain current of 330 mA with a maximum drain-source voltage of 20 V.

Its low maximum drain-source resistance of 3.6 ohms facilitates low power dissipation and enhanced efficiency, complemented by a gate charge of 1.2 nC which allows for rapid and precise switching control. The transistor operates in an enhancement channel mode and features a high maximum power dissipation capability of 500 mW, making it suitable for various electronic circuits requiring moderate power MOSFET components.

Designed for demanding environments, it operates within a broad temperature range from -55°C to 150°C, providing versatile application potential. The device dimension footprint is minimal with a length of 1.25 mm, width of 1.7 mm, and height of 0.7 mm, optimized for compact circuit board layouts. Being manufactured in Japan assures high manufacturing standards and quality assurance.

This dual MOSFET component finds applications in electronic circuits that require efficient surface mounting solutions, including power management, switching regulators, and other semiconductor module designs in industrial, automotive (non-automotive standard), and consumer electronics sectors.

Features isolated dual P-channel MOSFET transistor configuration. Maximum drain-source voltage of 20 V. Maximum drain current of 330 mA. Low on-resistance of 3.6 Ω for improved efficiency. Enhancement-type channel mode for precise control.

Max power dissipation rated at 500 mW. Typical gate charge 1.2 nC at Vgs for fast switching. Operating temperature from -55°C to 150°C. Compact 6-Pin UF6 surface mount package. Manufactured in Japan ensuring quality standards.

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