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Toshiba N-Channel Enhancement Mode MOSFET 500 mA 20 V Surface Mount UFMT 3-Pin SSM3K36TU(TE85L)

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Toshiba N-Channel Enhancement Mode MOSFET 500 mA 20 V Surface Mount UFMT 3-Pin SSM3K36TU(TE85L)

Name: Toshiba N-Channel Enhancement Mode MOSFET 500 mA 20 V Surface Mount UFMT 3-Pin SSM3K36TU(TE85L)
Brand: Toshiba
SKU: 213344
Price: 0.26 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	700μm
Length	1.2mm
Model	SSM3K36TU(TE85L)
Width	1.7mm
Mount Type	Surface
Series	SSM3
Maximum Operating Temperature	150°C
Package Type	UFM
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	500mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	1.52Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	1.23nC
Maximum Gate Source Voltage Vgs	-10, +10V
Forward Voltage Vf	-0.88V

Key Features

This MOSFET features a UFMT package with three pins for easy PCB integration.
It has a maximum drain source resistance of 1.52 ohms, ensuring efficient performance.
The device operates within a temperature range of -55°C to 150°C, suitable for various environments.
Its maximum power dissipation is 500 mW, suitable for low power applications.
Its maximum gate-source voltage rating ranges from -10 V to +10 V, providing versatility.
The typical gate charge at Vgs is 1.23 nC, allowing for responsive switching.
The device is surface mount mount type, facilitating modern manufacturing techniques.
Manufactured in Japan, it meets high-quality standards.

Product Description

Toshiba SSM3K36TU(TE85L) is a high-quality N-Channel Enhancement Mode MOSFET engineered for reliable surface mount electronic applications. This discrete semiconductor component supports a maximum continuous drain current of 500 mA and a maximum drain-source voltage rating of 20 V, meeting requirements for low voltage switching tasks.

The device features a UFMT package type with three pins, optimized for surface mounting on printed circuit boards. Its maximum drain source resistance (Rds) of 1.52 ohms provides effective conduction characteristics, enhancing energy efficiency during operation. The maximum power dissipation of 500 milliwatts allows for continuous performance within power-limited environments.

Operating temperature ranges from a minimum of -55°C to a maximum of 150°C, ensuring stable electrical performance across a variety of industrial, commercial, and consumer electronics settings. Its gate voltage rating of -10 V to +10 V supports flexible driving circuits. Typical gate charge (Qg) at Vgs is 1.23 nanocoulombs, enabling rapid switching performance suitable for fast digital or analog circuits.

Physically compact with dimensions of approximately 1.2 mm in length, 1.7 mm in width, and 700 micrometers in height, this MOSFET suits applications with stringent space constraints. The surface mount type ensures compatibility with automated PCB assembly processes enhancing manufacturing efficiency.

There are no special automotive or other certifications applicable for this model. This MOSFET is ideal for use in industrial electronics, telecommunications equipment, consumer electronics, and other electronic assemblies requiring efficient switching devices.

Its low voltage rating and modest current capacity make it appropriate for signal-level amplification and small power switching tasks. The compact UFMT package supports high-density circuit board designs. Designed for new installations and replacements, the product's condition is new.

Explore additional discrete semiconductor options, MOSFETs, and electronic components within EnvMart’s comprehensive electronics catalogue for your design and manufacturing requirements.