onsemi Small Signal PNP Transistor, Maximum Collector Current -100 mA, Collector Emitter Voltage -45 V, 6-Pin BC857BDW1T1G

onsemi BC857BDW1T1G is a small signal PNP transistor designed for surface mount applications. Featuring a maximum DC collector current of -100 mA and collector emitter voltage of -45 V, this transistor is ideal for low power electronic circuits requiring reliable switching and amplification.

Housed in a 6-Pin SOT-363 package, it offers compact size with dimensions 2.2 mm length, 2.2 mm width, and 1.1 mm height, making it suitable for dense PCB assemblies.

This device delivers a minimum DC current gain (hFE) of 200 and can operate in temperatures ranging from -55°C to 150°C, providing robust performance in automotive and industrial environments. It meets the automotive standard AEC-Q101, attesting to its quality and reliability.

Its maximum power dissipation is 380 mW, and the transistor configuration is isolated with a maximum transition frequency of 100 MHz, allowing use in fast switching and high-frequency applications.

Widely applied in industrial controls, automotive electronics, communication devices, and consumer electronic products, the BC857BDW1T1G transistor offers versatility and performance for engineers and designers.

Operates with a maximum collector base voltage of 50 V ensuring reliable isolation. Maximum power dissipation of 380 mW suitable for low power applications. Surface mount design with dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height.

Current gain hFE minimum rating of 200 enables efficient amplification. Certified to automotive standard AEC-Q101 for quality and durability. Wide operating temperature range from -55°C to 150°C for harsh environments. Maximum transition frequency of 100 MHz suitable for high-frequency circuits.

PNP transistor polarity ideal for switching and amplifier functions. Explore the extensive onsemi transistor range on EnvMart for reliable semiconductor solutions tailored to your industrial and commercial applications.

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