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onsemi NPN Small Signal Transistor, 100 mA, 45 V, 3-Pin SOT-23 BC847BLT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC847BLT3G
Width 2.64mm
Mount Type Surface
Series BC847BL
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
• MSL 1

Key Features

  • Supports maximum DC collector current of 100 mA.
  • Maximum collector-emitter voltage rating of 45 V.
  • Compact 3-pin SOT-23 surface mount package suitable for low-power circuits.
  • High DC current gain with minimum hFE of 200.
  • Operating temperature range from -55°C to 150°C.
  • Maximum power dissipation of 300 mW ensures reliable operation.
  • Automotive-qualified AEC-Q101 standard compliant version available.
  • Suitable for ESD, polarity reversal, data line, and inductive load protection.

Product Description

The onsemi BC847BLT3G is an NPN bipolar transistor from the BC847BL series, intended for various linear and switching general-purpose applications in electronic designs. It features a maximum DC collector current of 100 mA and can withstand a maximum collector-emitter voltage of 45 V, supporting robust low-power performance.

Packaged in a compact 3-pin SOT-23 surface mount device, it is ideal for space-constrained assemblies requiring high efficiency. The device provides a minimum DC current gain (hFE) of 200, ensuring amplification stability and performance in signal processing tasks.

This transistor operates reliably within a temperature range from -55°C to 150°C and has a maximum power dissipation rating of 300 mW, making it suitable for industrial, automotive, and consumer electronics environments. It is also qualified to the AEC-Q101 automotive standard, confirming its suitability for automotive applications requiring stringent quality and reliability standards.

Common industrial applications include ESD protection, polarity reversal protection, data line protection, inductive load protection, and steering logic circuits. The transistor supports enhanced electrostatic discharge protection with an ESD rating exceeding 400 V for both human body and machine model.

Supports maximum DC collector current of 100 mA. Maximum collector-emitter voltage of 45 V. Compact 3-pin SOT-23 surface mount package. Minimum DC current gain hFE of 200. Wide operating temperature range: -55°C to 150°C.

Maximum power dissipation of 300 mW. Automotive standard compliance: AEC-Q101. ESD ratings greater than 400 V human body and machine model.

This transistor is highly reliable for industrial electronics, automotive controls, consumer devices, and general purpose semiconductor needs. Environmentally compliant with no hazardous substances, it is ready for modern electronic assembly processes.

Explore more semiconductor and bipolar transistor products in the Electronics & Electricals category on EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi NPN Small Signal Transistor, 100 mA, 45 V, 3-Pin SOT-23 BC847BLT3G
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

This transistor has a maximum collector-emitter voltage rating of 45 V.

It operates reliably within a temperature range from -55°C to 150°C.

This model is packaged in a compact 3-pin SOT-23 surface mount package.

The minimum DC current gain (hFE) for this transistor is 200.

The maximum power dissipation for this model is 300 mW.

Yes, it is compliant with the AEC-Q101 automotive standard, making it suitable for automotive applications.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

This model is an NPN bipolar transistor.

The maximum transition frequency (ft) for this model is 100 MHz.

It is suitable for ESD protection, polarity reversal protection, data line protection, and inductive load protection.

The maximum emitter-base voltage (VEBO) is 6 V.

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