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onsemi NTMTS Type N-Channel MOSFET, 236 A, 100 V, 8-Pin TDFN NTMTSC002N10MCTXG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.02mm |
| Length | 8.4mm |
| Model | NTMTSC002N10MCTXG |
| Width | 8.5mm |
| Mount Type | Surface |
| Series | NTMTS |
| Maximum Operating Temperature | 175°C |
| Package Type | TDFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 236A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.9W |
| Typical Gate Charge Qg @ Vgs | 89nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET operates with enhancement mode channel for efficient switching.
- Surface mount design ensures compact PCB integration.
- Maximum power dissipation up to 3.9 W for reliable thermal performance.
- Gate-source voltage rating of ±20 V enables safe control signals.
- Operating temperature range from -55°C to 175°C supports harsh environments.
- Low maximum drain-to-source resistance of 2 mΩ reduces conduction losses.
- TDFN package offers 8 pins in a compact footprint (8.4 mm length, 8.5 mm width, 1.02 mm height).
- Typical gate charge of 89 nC allows fast switching speeds.
Product Description
The onsemi NTMTSC002N10MCTXG is a high-performance N-Channel MOSFET designed for power applications requiring continuous drain current up to 236 A and drain-source voltage of 100 V. Packaged in an 8-pin TDFN surface-mount, this device fits compact designs while maintaining efficient thermal dissipation with a maximum power rating of 3.9 W.
Featuring enhancement mode channel operation and a low resistance of 2 milliohms, it offers minimal conduction losses vital for synchronous rectification and DC-DC conversion circuits. The device supports gate-source voltages up to 20 V, making it compatible with a wide range of control systems.
With an extended operating temperature range from -55°C to 175°C, it is suitable for industrial, automotive (non-automotive standard compliant), HVAC, and power management applications where reliability under harsh conditions is critical. The typical gate charge of 89 nC enables quick switching performance essential in high-frequency power electronics.
The 8-pin TDFN package dimensions (8.4 mm length, 8.5 mm width, and 1.02 mm height) ensure ease of PCB layout in compact designs while maintaining mechanical integrity. This MOSFET device complies with RoHS directives, ensuring environmentally friendly manufacturing.
It is ideal for use in power conversion, synchronous rectification, and energy management systems. High continuous drain current capability supports heavy load power requirements. Designed for surface mount technology to streamline manufacturing processes.
Enables enhanced efficiency and reliability in modern electronic circuits. Explore the onsemi range of semiconductor devices on EnvMart for all your power component needs.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 236 A, making it suitable for high-power applications.
The maximum drain-source voltage for this unit is 100 V, which is essential for various power applications.
The typical gate charge for this MOSFET is 89 nC, facilitating fast switching speeds in electronic circuits.
The TDFN package dimensions are 8.4 mm in length, 8.5 mm in width, and 1.02 mm in height, ensuring compact PCB integration.
This model has a maximum power dissipation of 3.9 W, which supports reliable thermal performance.
The maximum gate-source voltage rating for this device is ±20 V, allowing safe control signals.
This unit features an enhancement mode channel, which is typical for efficient switching applications.
The maximum drain-source resistance for this MOSFET is 2 mΩ, which helps to minimize conduction losses.
This model complies with RoHS directives, ensuring environmentally friendly manufacturing practices.
This MOSFET is designed for surface mount technology, which streamlines manufacturing processes and PCB layout.
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