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onsemi UniFET N-Channel MOSFET 680 mA 25 V Enhancement Mode Surface Mount SOT-23 FDV303N

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 930μm
Length 2.92mm
Model FDV303N
Width 1.3mm
Mount Type Surface
Series UniFET
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 680mA
Maximum Drain Source Voltage Vds 25V
Maximum Drain Source Resistance Rds 450mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 350mW
Typical Gate Charge Qg @ Vgs 1.64nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf -1.6V

Key Features

  • Features a maximum continuous drain current of 680 mA.
  • Operates at a maximum drain-source voltage of 25 V.
  • Enhancement mode N-channel MOSFET with low on-resistance of 450 mΩ.
  • Compact SOT-23 package for space-saving surface mount applications.
  • High maximum power dissipation of 350 mW supports reliable operation.
  • Wide operating temperature range from -55°C to 150°C.
  • Typical gate charge of 1.64 nC facilitates fast switching performance.
  • Maximum gate-source voltage rating of 8 V for robust gate control.

Product Description

onsemi FDV303N UniFET N-Channel MOSFET is a high-performance enhancement-mode transistor designed for compact and efficient switching applications. This device supports a maximum continuous drain current of 680 mA and is rated for a maximum drain-source voltage of 25 V, making it suitable for low voltage electronic circuits and power management tasks.

It features a surface mount SOT-23 package that conserves PCB space while enabling easy integration into modern electronic designs. The MOSFET benefits from Fairchild Semiconductor’s proprietary high cell density DMOS technology, which minimizes on-state resistance and enhances ruggedness for reliable and efficient operation.

The device’s maximum power dissipation is 350 mW, and it functions reliably over a broad temperature range from -55°C to 150°C, supporting demanding industrial and consumer applications. A typical gate charge of 1.64 nC contributes to fast switching speeds, while the 8 V maximum gate-source voltage rating ensures robust gate control and protection.

Physical dimensions - length 2.92 mm, width 1.3 mm, height 930 μm - make the FDV303N well suited for applications with strict space constraints. It delivers forward voltage of -1.6 V, supporting efficient circuit operation with minimal losses.

Maximum continuous drain current of 680 mA provides ample current capacity. Maximum drain-source voltage of 25 V ensures compatibility with low voltage power supplies. Low on-resistance of 450 mΩ reduces conduction losses during operation.

Compact surface mount SOT-23 package enables compact PCB layouts. Robust operation between -55°C and 150°C covers harsh environmental conditions. Typical gate charge of 1.64 nC facilitates efficient switching transitions.

Maximum gate-source voltage of 8 V protects the transistor’s gate from damage. Enhancement mode N-channel design ideal for switching and amplification tasks.

This MOSFET is ideal for use in electronic components, power management ICs, and semiconductor discrete applications across industrial, automotive, and consumer electronics sectors. Its small size and high performance support integration into diverse circuits such as voltage regulators, switching devices, and load drivers.

Explore EnvMart’s comprehensive range of MOSFETs and electronic components for industrial and commercial quality and performance.

onsemi UniFET N-Channel MOSFET 680 mA 25 V Enhancement Mode Surface Mount SOT-23 FDV303N
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Frequently Asked Questions

The maximum continuous drain current for this model is 680 mA.

This MOSFET operates at a maximum drain-source voltage of 25 V.

The typical gate charge is 1.64 nC, which facilitates fast switching performance.

The dimensions are 2.92 mm in length, 1.3 mm in width, and 930 μm in height.

It has a maximum power dissipation of 350 mW, supporting reliable operation.

The on-resistance is 450 mΩ, which helps reduce conduction losses during operation.

It operates reliably over a temperature range from -55°C to 150°C.

This model comes in a compact SOT-23 surface mount package.

The maximum gate-source voltage rating is 8 V, providing robust gate control.

It features an enhancement mode N-channel design, suitable for switching and amplification tasks.

This MOSFET is suitable for use in electronic components, power management ICs, and various applications across industrial, automotive, and consumer electronics sectors.

The FDV303N has a pin count of 3.

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