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Infineon HEXFET N-Channel MOSFET 17 A 150 V Enhancement Mode 3-Pin TO-220 IRFB4019PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB4019PBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 80W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports maximum continuous drain current of 17 A for robust performance.
- Maximum drain-source voltage rated at 150 V for high-voltage operation.
- Package type is TO-220 with a 3-pin configuration suitable for through-hole mounting.
- Enhancement mode channel operation ensuring controlled switching characteristics.
- Capable of dissipating up to 80 W power for demanding applications.
- Operates reliably across a wide temperature range from -55°C to 175°C.
- Low typical gate charge of 13 nC at Vgs improves switching speed and efficiency.
- Maximum gate-source voltage tolerance of -20 V to +20 V ensures reliability.
Product Description
Infineon IRFB4019PBF is a HEXFET N-Channel MOSFET engineered for high-performance switching in electronic power management. Rated for a continuous drain current of 17 A and drain-source voltage up to 150 V, this device suits a variety of industrial, automotive, and consumer electronics applications where efficient power control is critical.
The enhancement mode channel type ensures precise modulation of current, making it ideal for Class D audio amplifiers and power supply circuits. The TO-220 package with three pins facilitates reliable through-hole mounting and heat dissipation.
With a maximum power dissipation of 80 W and an operating temperature range from -55°C to 175°C, the IRFB4019PBF can handle demanding thermal environments. Its low gate charge (typical 13 nC at Vgs) enables fast switching performance while minimizing switching losses.
The device includes a forward voltage drop of 1.3 V and maximum gate-source voltage tolerance between -20 V and +20 V, ensuring robustness against voltage spikes. Compact physical dimensions allow integration into space-sensitive systems without compromising performance.
Infineon's extensive semiconductor portfolio, including COOLMOS and OPTIMOS families, offer solutions with enhanced efficiency and reliability. The IRFB4019PBF aligns with these standards, providing a trusted component choice for power management in industrial automation, automotive electronics, HVAC systems, and manufacturing equipment.
Supports maximum continuous drain current of 17 A for robust performance. Maximum drain-source voltage rated at 150 V for high-voltage operation. Package type is TO-220 with a 3-pin configuration suitable for through-hole mounting.
Enhancement mode channel operation ensuring controlled switching characteristics. Capable of dissipating up to 80 W power for demanding applications. Operates reliably across a wide temperature range from -55°C to 175°C.
Low typical gate charge of 13 nC at Vgs improves switching speed and efficiency. Maximum gate-source voltage tolerance of -20 V to +20 V ensures reliability. Forward voltage of 1.3 V to optimize conduction losses in circuits.
Compact dimensions with length 10.66 mm, width 4.82 mm, and height 9.02 mm for space-constrained designs. Explore more Infineon MOSFETs and power semiconductor devices on EnvMart to find the right components for your electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
It is rated for a maximum drain-source voltage of 150 V.
This unit comes in a TO-220 package type with a 3-pin configuration suitable for through-hole mounting.
It operates reliably across a temperature range from -55°C to 175°C.
The typical gate charge at Vgs is 13 nC, which improves switching speed and efficiency.
This model can dissipate up to 80 W of power.
The forward voltage drop is 1.3 V, optimizing conduction losses in circuits.
The maximum gate-source voltage tolerance is between -20 V and +20 V.
The dimensions are 10.66 mm in length, 4.82 mm in width, and 9.02 mm in height.
It features an N-channel type for enhancement mode operation.
The maximum drain-source resistance is 95 mΩ.
This MOSFET is suitable for industrial, automotive, and consumer electronics applications where efficient power control is critical.
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