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Infineon HEXFET N-Channel MOSFET, 59 A, 100 V Enhancement Mode, TO-220 Package IRF3710ZPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF3710ZPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 59A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 82nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High current capability of 59 amperes ensures robust power handling.
- Supports a maximum drain-source voltage of 100 volts for reliable operation.
- Enhancement mode with a low 18 milliohms maximum drain-source resistance.
- TO-220 through-hole package with 3 pins for easy mounting.
- Maximum power dissipation rating of 160 watts for high load tolerance.
- Wide operating temperature range from -55°C to 175°C for industrial applications.
- Typical gate charge of 82 nanocoulombs permits efficient switching.
- Maximum gate-source voltage of ±20 volts ensures gate protection.
Product Description
Infineon IRF3710ZPBF HEXFET N-Channel MOSFET is designed for high-performance motor control and synchronous rectification applications. This 3-pin TO-220 package device supports a maximum continuous drain current of 59 amperes and a maximum drain-source voltage of 100 volts, providing robust power handling capabilities required in industrial, electronic, and automotive power electronics.
The enhancement mode MOSFET features a low on-resistance of 18 milliohms, resulting in efficient switching and low conduction losses. It has a maximum power dissipation rating of 160 watts and a wide operating temperature range from -55°C to 175°C which enables reliable operation under harsh environmental conditions.
The device's typical gate charge of 82 nanocoulombs allows for fast switching speeds in power conversion systems, while the maximum gate-source voltage of ±20 volts protects the gate from overvoltage stress. The standard TO-220 through-hole mounting simplifies integration into various assemblies.
High current capability of 59 amperes ensures robust power handling. Supports a maximum drain-source voltage of 100 volts for reliable operation. Enhancement mode with a low 18 milliohms maximum drain-source resistance. TO-220 through-hole package with 3 pins for easy mounting.
Maximum power dissipation rating of 160 watts for high load tolerance. Wide operating temperature range from -55°C to 175°C for industrial applications. Typical gate charge of 82 nanocoulombs permits efficient switching.
Maximum gate-source voltage of ±20 volts ensures gate protection. Compact dimensions: length 10.54 mm, width 4.69 mm, height 8.77 mm. Forward voltage of 1.3 V typical for optimized conduction losses.
This MOSFET is suited for use in industrial electronics, power supplies, motor control circuits, and other applications requiring a high-power semiconductor device with efficient switching and robustness. It is a component in the Infineon HEXFET series known for reliability and performance in power electronics design.
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Frequently Asked Questions
The maximum continuous drain current for this model is 59 amperes, allowing for robust power handling in various applications.
It supports a maximum drain-source voltage of 100 volts, ensuring reliable operation in power electronics.
The maximum drain-source resistance is 18 milliohms, which contributes to efficient switching and low conduction losses.
The maximum power dissipation rating is 160 watts, accommodating high load tolerance in demanding applications.
This MOSFET operates within a wide temperature range from -55°C to 175°C, suitable for industrial applications.
The typical gate charge is 82 nanocoulombs, allowing for efficient switching speeds in power conversion systems.
It comes in a TO-220 through-hole package with 3 pins, facilitating easy mounting in various assemblies.
The maximum gate-source voltage is ±20 volts, which protects the gate from overvoltage stress.
The dimensions are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
This MOSFET is suitable for high-performance motor control and synchronous rectification applications.
The typical forward voltage is 1.3 volts, optimized for reduced conduction losses.
It features an N-channel configuration, which is common in power electronics for efficient operation.
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