STMicroelectronics N-Channel IGBT, 10 A Collector Current, 375 V Collector Emitter Voltage, 125 W Power STGB10NB37LZT4

STMicroelectronics STGB10NB37LZT4 is a high-efficiency N-Channel Insulated Gate Bipolar Transistor (IGBT) designed to combine the gate-drive simplicity of a MOSFET with the high-current and low-saturation voltage capabilities of bipolar transistors. It supports a maximum continuous collector current of 10 A and a collector emitter voltage of 375 V, making it ideal for power switching applications that demand fast switching and high currents.

The device is housed in a TO-263 package suitable for surface mounting on printed circuit boards, featuring a compact size with dimensions approximately 28.9 mm in length, 10.4 mm in width, and 4.6 mm in height. It has a switching speed of 8 microseconds, enabling rapid transitions essential in modern industrial equipment and control systems.

Its wide operating temperature range, from -65°C to 175°C, allows use in demanding environments typical in industrial, automotive, and power management applications. The IGBT supports a maximum gate emitter voltage of 12 V and features a collector emitter saturation voltage of 1.8 V, balancing control precision and conduction efficiency.

The STGB10NB37LZT4 complies with RoHS environmental standards, making it suitable for eco-conscious designs, and integrates three electrical pins configured for ease of installation and operation on assembly lines and inside complex electronic modules.

This device is widely applicable in industrial automation, power converters, inverters, motor drives, and energy management systems requiring efficient power switching components. Maximum continuous collector current of 10 amperes for robust performance.

Collector emitter voltage rating of 375 volts for high voltage operations. 125 watts maximum power dissipation ensuring reliable heat management. Compact TO-263 package with surface mount type for easy PCB integration. Three-pin configuration enabling simple connectivity and control.

Fast switching speed of 8 microseconds suited for rapid electrical switching. Wide operating temperature range from -65°C to 175°C for versatile environments. Maximum gate emitter voltage of 12 volts to protect gate integrity.

Collector emitter saturation voltage of 1.8 volts to optimize conduction losses. RoHS compliant device ensuring environmental safety standards. Explore the STMicroelectronics range of IGBTs and other semiconductor devices at EnvMart for all your industrial and electrical component needs.