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STMicroelectronics N-Channel IGBT, 200 A 600 V, 4-Pin ISOTOP Clamp Mount STGE200NB60S

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STMicroelectronics N-Channel IGBT, 200 A 600 V, 4-Pin ISOTOP Clamp Mount STGE200NB60S

Name: STMicroelectronics N-Channel IGBT, 200 A 600 V, 4-Pin ISOTOP Clamp Mount STGE200NB60S
Brand: STMicroelectronics
SKU: 211591
Price: 43.54 USD
Availability: InStock

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Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	12.2mm
Length	38.2mm
Model	STGE200NB60S
Width	31.7mm
Mount Type	Clamp
Series	Powermesh
Maximum Operating Temperature	150°C
Package Type	ISOTOP
Minimum Operating Temperature	-55°C
Standards/Approvals	ECOPACK, JESD97
Pin Count	4
Maximum Continuous Collector Current Ic	200A
Maximum Collector Emitter Voltage Vceo	600V
Maximum Collector Emitter Saturation Voltage VceSAT	1.6V
Channel Type	N
Maximum Power Dissipation Pd	600W
Maximum Gate Emitter Voltage VGEO	±20 V

Key Features

Maximum continuous collector current of 200 amperes.
Rated maximum collector emitter voltage of 600 volts.
Maximum power dissipation up to 600 watts.
Compact 4-pin ISOTOP package with clamp mounting.
Wide operating temperature range from -55°C to 150°C.
Maximum gate emitter voltage of ±20 volts for robust control.
Low saturation voltage of 1.6 volts for efficient switching.
Meets ECOPACK and JESD97 environmental and quality standards.

Product Description

STMicroelectronics STGE200NB60S is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power applications requiring efficient switching and high current capacity. With a maximum continuous collector current of 200 A and a collector emitter voltage rating of 600 V, this device is ideal for industrial, power electronics, motor control, and inverter applications.

The device is housed in a 4-pin ISOTOP package with clamp mounting, facilitating easy and secure installation in electronic modules and circuit assemblies. Its excellent thermal characteristics allow operation in harsh environments from -55°C up to 150°C.

The STGE200NB60S combines the fast switching and high input impedance of MOSFETs with the low saturation voltage and ruggedness of bipolar transistors, delivering high efficiency in power management.

Additional specifications include a maximum power dissipation of 600 W, maximum gate emitter voltage tolerance of ±20 V, and a saturation voltage of 1.6 V, enabling reliable and efficient operation in demanding electrical systems.

Its compact dimensions of 38.2 mm length, 31.7 mm width, and 12.2 mm height make it suitable for applications with space constraints. Compliance with ECOPACK and JESD97 standards assures environmental and safety conformity.

Maximum continuous collector current of 200 amperes. Maximum collector emitter voltage of 600 volts. Power dissipation rating up to 600 watts. 4-pin ISOTOP package with clamp mounting type. Operating temperature range from -55°C to 150°C.

Maximum gate emitter voltage ±20 volts. Collector emitter saturation voltage of 1.6 volts. Compact size for ease of integration. Industry standard ECOPACK and JESD97 certifications.

This IGBT is suitable for diverse industrial applications including power converters, motor drives, and switching power supplies in manufacturing, industrial automation, HVAC systems, and renewable energy solutions.

Explore more high-performance semiconductor devices like STMicroelectronics STGE200NB60S within the EnvMart platform for industrial-grade power electronics needs.