onsemi QFET Type P-Channel MOSFET, 6.6 A Drain Current, 100 V Drain Source Voltage, Surface Mount TO-252 FQD8P10TM

onsemi FQD8P10TM is a QFET Type P-Channel MOSFET designed for automotive and industrial electronic applications requiring robust, high-performance switching components. This enhancement mode device supports a maximum continuous drain current of 6.6 A and withstands drain-source voltages up to 100 V.

The component is housed in a surface-mount TO-252 package with a 3-pin configuration, facilitating compact PCB layouts and efficient assembly processes. Its maximum power dissipation is rated at 2.5 W, enabling it to handle moderate power loads effectively while maintaining thermal stability across wide temperature variations from -55°C to 150°C.

This MOSFET exhibits a low on-resistance of 530 mΩ, reducing conduction losses and improving energy efficiency in power switching circuits. The typical gate charge of 12 nC ensures rapid switching, suitable for high-frequency applications.

The device’s maximum gate-source voltage of ±30 V provides strong gate control and protection against voltage spikes. Its compact size with dimensions of 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height makes it well-suited for space-constrained designs.

Meeting the automotive AEC-Q101 standard, the FQD8P10TM guarantees high reliability and quality required for automotive electronic systems. Manufactured in Malaysia, it aligns with global production quality norms.

Features a compact surface mount TO-252 package with 3 pins for easy integration. Operates with an enhancement mode P-channel configuration offering reliable switching. Maximum power dissipation of 2.5 W enables efficient thermal management.

Wide operating temperature range from -55°C to 150°C supports demanding environments. Maximum gate-source voltage rating of ±30 V ensures robust gate drive tolerance. Low maximum drain-source resistance of 530 mΩ to minimize conduction losses.

Typical gate charge of 12 nC facilitates fast switching speeds. Compact dimensions measuring 6.6 mm length, 6.1 mm width, and 2.3 mm height. Automotive grade with compliance to AEC-Q101 standards for quality and reliability.

Manufactured in Malaysia ensuring global quality standards are met.

This MOSFET is ideal for automotive electronics, industrial power control, and precision switching tasks where reliability and performance are critical. Explore more semiconductor components on EnvMart to enhance your design capabilities.